Silicon nanoelectronics: Prospects and promises

T. C. McGill; H. R. Levy; E. S. Daniel; P. O. Pettersson; P. M. Bridger; E. C. Piquette; J. T. Jones; O. J. Marsh

Silicon nanoelectronics: Prospects and promises

T. C. McGill, H. R. Levy, E. S. Daniel, P. O. Pettersson, P. M. Bridger, E. C. Piquette, J. T. Jones, O. J. Marsh

Physiology & Biomedical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

It is widely recognized that the holy grail for nanolectronics is a technology that is compatible with standard silicon. We review the current prospects for the development of such a technology. We will discuss the current prospects for Si based heterojunctions including SiGeC, CaF₂, CeO₂, SiO₂ and ZnS to name just a few. Further, we review the status of one device structures, the tunnel switched diode, which can currently be deployed in a number of applications.

Original language	English (US)
Pages	119-121
Number of pages	3
State	Published - 1997
Event	Proceedings of the 1997 Advanced Workshop on Frontiers in Electronics, WOFE'97 - Tenerife, Spain Duration: Jan 6 1997 → Jan 11 1997

Other

Other	Proceedings of the 1997 Advanced Workshop on Frontiers in Electronics, WOFE'97
City	Tenerife, Spain
Period	1/6/97 → 1/11/97

ASJC Scopus subject areas

General Engineering

Cite this

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title = "Silicon nanoelectronics: Prospects and promises",

abstract = "It is widely recognized that the holy grail for nanolectronics is a technology that is compatible with standard silicon. We review the current prospects for the development of such a technology. We will discuss the current prospects for Si based heterojunctions including SiGeC, CaF2, CeO2, SiO2 and ZnS to name just a few. Further, we review the status of one device structures, the tunnel switched diode, which can currently be deployed in a number of applications.",

author = "McGill, {T. C.} and Levy, {H. R.} and Daniel, {E. S.} and Pettersson, {P. O.} and Bridger, {P. M.} and Piquette, {E. C.} and Jones, {J. T.} and Marsh, {O. J.}",

year = "1997",

language = "English (US)",

pages = "119--121",

note = "Proceedings of the 1997 Advanced Workshop on Frontiers in Electronics, WOFE'97 ; Conference date: 06-01-1997 Through 11-01-1997",

}

TY - CONF

T1 - Silicon nanoelectronics

T2 - Proceedings of the 1997 Advanced Workshop on Frontiers in Electronics, WOFE'97

AU - McGill, T. C.

AU - Levy, H. R.

AU - Daniel, E. S.

AU - Pettersson, P. O.

AU - Bridger, P. M.

AU - Piquette, E. C.

AU - Jones, J. T.

AU - Marsh, O. J.

PY - 1997

Y1 - 1997

N2 - It is widely recognized that the holy grail for nanolectronics is a technology that is compatible with standard silicon. We review the current prospects for the development of such a technology. We will discuss the current prospects for Si based heterojunctions including SiGeC, CaF2, CeO2, SiO2 and ZnS to name just a few. Further, we review the status of one device structures, the tunnel switched diode, which can currently be deployed in a number of applications.

AB - It is widely recognized that the holy grail for nanolectronics is a technology that is compatible with standard silicon. We review the current prospects for the development of such a technology. We will discuss the current prospects for Si based heterojunctions including SiGeC, CaF2, CeO2, SiO2 and ZnS to name just a few. Further, we review the status of one device structures, the tunnel switched diode, which can currently be deployed in a number of applications.

UR - http://www.scopus.com/inward/record.url?scp=0030646960&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030646960&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030646960

SP - 119

EP - 121

Y2 - 6 January 1997 through 11 January 1997

ER -

Silicon nanoelectronics: Prospects and promises

Abstract

Other

ASJC Scopus subject areas

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