Interface roughness effects in ultra-thin tunneling oxides

D. Z Y Ting, Erik S. Daniel, T. C. McGill

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Advanced MOSFET for ULSI and novel silicon-based devices require the use of ultrathin tunneling oxides where non-uniformity is often present. We report on our theoretical study of how tunneling properties of ultra-thin oxides are affected by roughness at the silicon/oxide interface. The effect of rough interfacial topography is accounted for by using the Planar Supercell Stack Method (PSSM) which can accurately and efficiently compute scattering properties of 3D supercell structures. Our results indicate that while interface roughness effects can be substantial in the direct tunneling regime, they are less important in the Fowler-Nordheim regime.

Original languageEnglish (US)
Pages (from-to)47-51
Number of pages5
JournalVLSI Design
Volume8
Issue number1-4
StatePublished - 1998
Externally publishedYes

Fingerprint

Surface roughness
Oxides
Silicon oxides
Topography
Scattering
Silicon

Keywords

  • Interface roughness
  • Oxide
  • SiO
  • Tunneling
  • Ultrathin

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Ting, D. Z. Y., Daniel, E. S., & McGill, T. C. (1998). Interface roughness effects in ultra-thin tunneling oxides. VLSI Design, 8(1-4), 47-51.

Interface roughness effects in ultra-thin tunneling oxides. / Ting, D. Z Y; Daniel, Erik S.; McGill, T. C.

In: VLSI Design, Vol. 8, No. 1-4, 1998, p. 47-51.

Research output: Contribution to journalArticle

Ting, DZY, Daniel, ES & McGill, TC 1998, 'Interface roughness effects in ultra-thin tunneling oxides', VLSI Design, vol. 8, no. 1-4, pp. 47-51.
Ting DZY, Daniel ES, McGill TC. Interface roughness effects in ultra-thin tunneling oxides. VLSI Design. 1998;8(1-4):47-51.
Ting, D. Z Y ; Daniel, Erik S. ; McGill, T. C. / Interface roughness effects in ultra-thin tunneling oxides. In: VLSI Design. 1998 ; Vol. 8, No. 1-4. pp. 47-51.
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