A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS

Paul Marshall; Matty Carts; Art Campbell; Ray Ladbury; Robert Reed; Cheryl Marshall; Steve Currie; Dale McMorrow; Steve Buchner; Christina Seidleck; Pam Riggs; Karl Fritz; Barb Randall; Barry Gilbert

doi:10.1109/TNS.2004.839193

A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS

Paul Marshall, Matty Carts, Art Campbell, Ray Ladbury, Robert Reed, Cheryl Marshall, Steve Currie, Dale McMorrow, Steve Buchner, Christina Seidleck, Pam Riggs, Karl Fritz, Barb Randall, Barry Gilbert

Physiology & Biomedical Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We compare heavy ion and proton SEE data on commercial SiGe technologies from IBMs 7 HP and 5 AM processes and Jazz Semiconductors SiGe120 process at data rates from 50 Mb/s to 12.4 Gb/s. Complex burst-error trends correlate with both data rate and particle LET, as well as pulsed laser probing of both data paths and clock distribution circuitry.

Original language	English (US)
Pages (from-to)	3457-3463
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	51
Issue number	6 II
DOIs	https://doi.org/10.1109/TNS.2004.839193
State	Published - Dec 2004

Keywords

Ground testing
High-speed testing
Silicon germanium (SiGe)
Single-event effect (SEE)
Single-event upset (SEU)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2004.839193

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Marshall, P., Carts, M., Campbell, A., Ladbury, R., Reed, R., Marshall, C., Currie, S., McMorrow, D., Buchner, S., Seidleck, C., Riggs, P., Fritz, K., Randall, B., & Gilbert, B. (2004). A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS. IEEE Transactions on Nuclear Science, 51(6 II), 3457-3463. https://doi.org/10.1109/TNS.2004.839193

Marshall, P, Carts, M, Campbell, A, Ladbury, R, Reed, R, Marshall, C, Currie, S, McMorrow, D, Buchner, S, Seidleck, C, Riggs, P, Fritz, K, Randall, B & Gilbert, B 2004, 'A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS', IEEE Transactions on Nuclear Science, vol. 51, no. 6 II, pp. 3457-3463. https://doi.org/10.1109/TNS.2004.839193

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abstract = "We compare heavy ion and proton SEE data on commercial SiGe technologies from IBMs 7 HP and 5 AM processes and Jazz Semiconductors SiGe120 process at data rates from 50 Mb/s to 12.4 Gb/s. Complex burst-error trends correlate with both data rate and particle LET, as well as pulsed laser probing of both data paths and clock distribution circuitry.",

keywords = "Ground testing, High-speed testing, Silicon germanium (SiGe), Single-event effect (SEE), Single-event upset (SEU)",

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note = "Funding Information: Manuscript received September 14, 2004. This work was supported in part by the Defense Threat Reduction Agency Radiation Hardened Microelectronic Program, and in part by the NASA Electronics Parts and Packaging Radiation Characterization Project. P. Marshall is a consultant and is at Brookneal, VA 24528 USA (e-mail: PWMarshall@aol.com). M. Carts and C. Seidleck are with Raytheon Information Technology, Lanham, MD 20706 USA. A. Campbell and D. McMorrow are with the Naval Research Laboratory, Washington, DC 20375 USA. R. Ladbury is with Orbital Sciences Corporation, McLean, VA 20166 USA. R. Reed was with NASA/GSFC, Code 561.4, Greenbelt, MD 20771 USA, and is now with Vanderbilt University, Nashville, TN 37235 USA. C. Marshall is with NASA/GSFC, Code 561.4, Greenbelt, MD 20771 USA. S. Currie, P. Riggs, K. Fritz, B. Randall, and B. Gilbert are with The Mayo Foundation, Rochester, MN 55905 USA. S. Buchner is with QSS Group, Inc., Greenbelt, MD 20771 USA. Digital Object Identifier 10.1109/TNS.2004.839193",

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AU - Ladbury, Ray

AU - Reed, Robert

AU - Marshall, Cheryl

AU - Currie, Steve

AU - McMorrow, Dale

AU - Buchner, Steve

AU - Seidleck, Christina

AU - Riggs, Pam

AU - Fritz, Karl

AU - Randall, Barb

AU - Gilbert, Barry

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AB - We compare heavy ion and proton SEE data on commercial SiGe technologies from IBMs 7 HP and 5 AM processes and Jazz Semiconductors SiGe120 process at data rates from 50 Mb/s to 12.4 Gb/s. Complex burst-error trends correlate with both data rate and particle LET, as well as pulsed laser probing of both data paths and clock distribution circuitry.

KW - Ground testing

KW - High-speed testing

KW - Silicon germanium (SiGe)

KW - Single-event effect (SEE)

KW - Single-event upset (SEU)

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A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS

Abstract

Keywords

ASJC Scopus subject areas

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