A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS

Paul Marshall, Matty Carts, Art Campbell, Ray Ladbury, Robert Reed, Cheryl Marshall, Steve Currie, Dale McMorrow, Steve Buchner, Christina Seidleck, Pam Riggs, Karl Fritz, Barb Randall, Barry Kent Gilbert

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We compare heavy ion and proton SEE data on commercial SiGe technologies from IBMs 7 HP and 5 AM processes and Jazz Semiconductors SiGe120 process at data rates from 50 Mb/s to 12.4 Gb/s. Complex burst-error trends correlate with both data rate and particle LET, as well as pulsed laser probing of both data paths and clock distribution circuitry.

Original languageEnglish (US)
Pages (from-to)3457-3463
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume51
Issue number6 II
DOIs
StatePublished - Dec 2004

Fingerprint

Pulsed lasers
Heavy ions
Clocks
bursts
heavy ions
Protons
high speed
Semiconductor materials
programming environments
protons
sensitivity
clocks
pulsed lasers
trends

Keywords

  • Ground testing
  • High-speed testing
  • Silicon germanium (SiGe)
  • Single-event effect (SEE)
  • Single-event upset (SEU)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS. / Marshall, Paul; Carts, Matty; Campbell, Art; Ladbury, Ray; Reed, Robert; Marshall, Cheryl; Currie, Steve; McMorrow, Dale; Buchner, Steve; Seidleck, Christina; Riggs, Pam; Fritz, Karl; Randall, Barb; Gilbert, Barry Kent.

In: IEEE Transactions on Nuclear Science, Vol. 51, No. 6 II, 12.2004, p. 3457-3463.

Research output: Contribution to journalArticle

Marshall, P, Carts, M, Campbell, A, Ladbury, R, Reed, R, Marshall, C, Currie, S, McMorrow, D, Buchner, S, Seidleck, C, Riggs, P, Fritz, K, Randall, B & Gilbert, BK 2004, 'A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS', IEEE Transactions on Nuclear Science, vol. 51, no. 6 II, pp. 3457-3463. https://doi.org/10.1109/TNS.2004.839193
Marshall, Paul ; Carts, Matty ; Campbell, Art ; Ladbury, Ray ; Reed, Robert ; Marshall, Cheryl ; Currie, Steve ; McMorrow, Dale ; Buchner, Steve ; Seidleck, Christina ; Riggs, Pam ; Fritz, Karl ; Randall, Barb ; Gilbert, Barry Kent. / A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS. In: IEEE Transactions on Nuclear Science. 2004 ; Vol. 51, No. 6 II. pp. 3457-3463.
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AU - Currie, Steve

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