A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS

Paul Marshall, Matty Carts, Art Campbell, Ray Ladbury, Robert Reed, Cheryl Marshall, Steve Currie, Dale McMorrow, Steve Buchner, Christina Seidleck, Pam Riggs, Karl Fritz, Barb Randall, Barry Gilbert

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

We compare heavy ion and proton SEE data on commercial SiGe technologies from IBMs 7 HP and 5 AM processes and Jazz Semiconductors SiGe120 process at data rates from 50 Mb/s to 12.4 Gb/s. Complex burst-error trends correlate with both data rate and particle LET, as well as pulsed laser probing of both data paths and clock distribution circuitry.

Original languageEnglish (US)
Pages (from-to)3457-3463
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume51
Issue number6 II
DOIs
StatePublished - Dec 1 2004

Keywords

  • Ground testing
  • High-speed testing
  • Silicon germanium (SiGe)
  • Single-event effect (SEE)
  • Single-event upset (SEU)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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