12 GHz clocked operation of ultralow power interband resonant tunneling diode pipelined logic gates

William Williamson, Steven B. Enquist, David H. Chow, Howard L. Dunlap, Suresh Subramaniam, Peiming Lei, Gary H. Bernstein, Barry K. Gilbert

Research output: Contribution to journalArticle

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Abstract

We report on the successful demonstration of a functionally complete set of logic gates based on resonant interband tunneling diodes (RITD's) with a maximum operating frequency in excess of 12 GHz. At this high frequency of operation, the power dissipation is remarkably low - on the order of 0.5 mW per gate. The circuits for all gates, AND, OR, XOR, and INV, shared the same layout geometry, consisting of two Schottky diodes and three RITD's. Logical functionality was determined solely by varying the relative areas of the devices.

Original languageEnglish (US)
Pages (from-to)222-230
Number of pages9
JournalIEEE Journal of Solid-State Circuits
Volume32
Issue number2
DOIs
StatePublished - Feb 1 1997

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Keywords

  • Complete logic family
  • High-speed circuits/devices
  • Low power devices
  • Mooolithic integration
  • Resonant interband tunneling devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Williamson, W., Enquist, S. B., Chow, D. H., Dunlap, H. L., Subramaniam, S., Lei, P., Bernstein, G. H., & Gilbert, B. K. (1997). 12 GHz clocked operation of ultralow power interband resonant tunneling diode pipelined logic gates. IEEE Journal of Solid-State Circuits, 32(2), 222-230. https://doi.org/10.1109/4.551914