TECHNOLOGY CHARACTERISTICS AND CONCERNS ARISING IN THE DESIGN AND FABRICATION OF AN ENTIRE SIGNAL PROCESSOR USING GALLIUM ARSENIDE INTEGRATED CIRCUITS.

Barbara A. Naused; Mark L. Samson; Daniel J. Schwab; Barry K. Gilbert

TECHNOLOGY CHARACTERISTICS AND CONCERNS ARISING IN THE DESIGN AND FABRICATION OF AN ENTIRE SIGNAL PROCESSOR USING GALLIUM ARSENIDE INTEGRATED CIRCUITS.

Barbara A. Naused, Mark L. Samson, Daniel J. Schwab, Barry K. Gilbert

Physiology & Biomedical Engineering

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

The authors discuss various GaAs transistor and gate technologies that have evolved since 1980, the strengths and deficiencies of each, and the probable uses of both the first and second generations of digital GaAs in a complex target signal processor, the AOSP. They also discuss the testing of GaAs components at the wafer probe, packaged part, and assembled circuit board levels, since the device speeds exceed the chip test capabilities of commercially available testers.

Original language	English (US)
State	Published - 1986

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@conference{b8bbddaa34194e2296d4fd9eddc9485a,

title = "TECHNOLOGY CHARACTERISTICS AND CONCERNS ARISING IN THE DESIGN AND FABRICATION OF AN ENTIRE SIGNAL PROCESSOR USING GALLIUM ARSENIDE INTEGRATED CIRCUITS.",

abstract = "The authors discuss various GaAs transistor and gate technologies that have evolved since 1980, the strengths and deficiencies of each, and the probable uses of both the first and second generations of digital GaAs in a complex target signal processor, the AOSP. They also discuss the testing of GaAs components at the wafer probe, packaged part, and assembled circuit board levels, since the device speeds exceed the chip test capabilities of commercially available testers.",

author = "Naused, {Barbara A.} and Samson, {Mark L.} and Schwab, {Daniel J.} and Gilbert, {Barry K.}",

year = "1986",

language = "English (US)",

}

TY - CONF

T1 - TECHNOLOGY CHARACTERISTICS AND CONCERNS ARISING IN THE DESIGN AND FABRICATION OF AN ENTIRE SIGNAL PROCESSOR USING GALLIUM ARSENIDE INTEGRATED CIRCUITS.

AU - Naused, Barbara A.

AU - Samson, Mark L.

AU - Schwab, Daniel J.

AU - Gilbert, Barry K.

PY - 1986

Y1 - 1986

N2 - The authors discuss various GaAs transistor and gate technologies that have evolved since 1980, the strengths and deficiencies of each, and the probable uses of both the first and second generations of digital GaAs in a complex target signal processor, the AOSP. They also discuss the testing of GaAs components at the wafer probe, packaged part, and assembled circuit board levels, since the device speeds exceed the chip test capabilities of commercially available testers.

AB - The authors discuss various GaAs transistor and gate technologies that have evolved since 1980, the strengths and deficiencies of each, and the probable uses of both the first and second generations of digital GaAs in a complex target signal processor, the AOSP. They also discuss the testing of GaAs components at the wafer probe, packaged part, and assembled circuit board levels, since the device speeds exceed the chip test capabilities of commercially available testers.

UR - http://www.scopus.com/inward/record.url?scp=0022989995&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022989995&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0022989995

ER -

TECHNOLOGY CHARACTERISTICS AND CONCERNS ARISING IN THE DESIGN AND FABRICATION OF AN ENTIRE SIGNAL PROCESSOR USING GALLIUM ARSENIDE INTEGRATED CIRCUITS.

Abstract

ASJC Scopus subject areas

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