TECHNOLOGY CHARACTERISTICS AND CONCERNS ARISING IN THE DESIGN AND FABRICATION OF AN ENTIRE SIGNAL PROCESSOR USING GALLIUM ARSENIDE INTEGRATED CIRCUITS.

Barbara A. Naused, Mark L. Samson, Daniel J. Schwab, Barry Kent Gilbert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The authors discuss various GaAs transistor and gate technologies that have evolved since 1980, the strengths and deficiencies of each, and the probable uses of both the first and second generations of digital GaAs in a complex target signal processor, the AOSP. They also discuss the testing of GaAs components at the wafer probe, packaged part, and assembled circuit board levels, since the device speeds exceed the chip test capabilities of commercially available testers.

Original languageEnglish (US)
Title of host publicationProceedings - IEEE Military Communications Conference
Place of PublicationNew York, NY, USA
PublisherIEEE
StatePublished - 1986

Fingerprint

Gallium arsenide
Integrated circuits
Transistors
Fabrication
Networks (circuits)
Testing

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Naused, B. A., Samson, M. L., Schwab, D. J., & Gilbert, B. K. (1986). TECHNOLOGY CHARACTERISTICS AND CONCERNS ARISING IN THE DESIGN AND FABRICATION OF AN ENTIRE SIGNAL PROCESSOR USING GALLIUM ARSENIDE INTEGRATED CIRCUITS. In Proceedings - IEEE Military Communications Conference New York, NY, USA: IEEE.

TECHNOLOGY CHARACTERISTICS AND CONCERNS ARISING IN THE DESIGN AND FABRICATION OF AN ENTIRE SIGNAL PROCESSOR USING GALLIUM ARSENIDE INTEGRATED CIRCUITS. / Naused, Barbara A.; Samson, Mark L.; Schwab, Daniel J.; Gilbert, Barry Kent.

Proceedings - IEEE Military Communications Conference. New York, NY, USA : IEEE, 1986.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Naused, BA, Samson, ML, Schwab, DJ & Gilbert, BK 1986, TECHNOLOGY CHARACTERISTICS AND CONCERNS ARISING IN THE DESIGN AND FABRICATION OF AN ENTIRE SIGNAL PROCESSOR USING GALLIUM ARSENIDE INTEGRATED CIRCUITS. in Proceedings - IEEE Military Communications Conference. IEEE, New York, NY, USA.
Naused BA, Samson ML, Schwab DJ, Gilbert BK. TECHNOLOGY CHARACTERISTICS AND CONCERNS ARISING IN THE DESIGN AND FABRICATION OF AN ENTIRE SIGNAL PROCESSOR USING GALLIUM ARSENIDE INTEGRATED CIRCUITS. In Proceedings - IEEE Military Communications Conference. New York, NY, USA: IEEE. 1986
Naused, Barbara A. ; Samson, Mark L. ; Schwab, Daniel J. ; Gilbert, Barry Kent. / TECHNOLOGY CHARACTERISTICS AND CONCERNS ARISING IN THE DESIGN AND FABRICATION OF AN ENTIRE SIGNAL PROCESSOR USING GALLIUM ARSENIDE INTEGRATED CIRCUITS. Proceedings - IEEE Military Communications Conference. New York, NY, USA : IEEE, 1986.
@inproceedings{b8bbddaa34194e2296d4fd9eddc9485a,
title = "TECHNOLOGY CHARACTERISTICS AND CONCERNS ARISING IN THE DESIGN AND FABRICATION OF AN ENTIRE SIGNAL PROCESSOR USING GALLIUM ARSENIDE INTEGRATED CIRCUITS.",
abstract = "The authors discuss various GaAs transistor and gate technologies that have evolved since 1980, the strengths and deficiencies of each, and the probable uses of both the first and second generations of digital GaAs in a complex target signal processor, the AOSP. They also discuss the testing of GaAs components at the wafer probe, packaged part, and assembled circuit board levels, since the device speeds exceed the chip test capabilities of commercially available testers.",
author = "Naused, {Barbara A.} and Samson, {Mark L.} and Schwab, {Daniel J.} and Gilbert, {Barry Kent}",
year = "1986",
language = "English (US)",
booktitle = "Proceedings - IEEE Military Communications Conference",
publisher = "IEEE",

}

TY - GEN

T1 - TECHNOLOGY CHARACTERISTICS AND CONCERNS ARISING IN THE DESIGN AND FABRICATION OF AN ENTIRE SIGNAL PROCESSOR USING GALLIUM ARSENIDE INTEGRATED CIRCUITS.

AU - Naused, Barbara A.

AU - Samson, Mark L.

AU - Schwab, Daniel J.

AU - Gilbert, Barry Kent

PY - 1986

Y1 - 1986

N2 - The authors discuss various GaAs transistor and gate technologies that have evolved since 1980, the strengths and deficiencies of each, and the probable uses of both the first and second generations of digital GaAs in a complex target signal processor, the AOSP. They also discuss the testing of GaAs components at the wafer probe, packaged part, and assembled circuit board levels, since the device speeds exceed the chip test capabilities of commercially available testers.

AB - The authors discuss various GaAs transistor and gate technologies that have evolved since 1980, the strengths and deficiencies of each, and the probable uses of both the first and second generations of digital GaAs in a complex target signal processor, the AOSP. They also discuss the testing of GaAs components at the wafer probe, packaged part, and assembled circuit board levels, since the device speeds exceed the chip test capabilities of commercially available testers.

UR - http://www.scopus.com/inward/record.url?scp=0022989995&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022989995&partnerID=8YFLogxK

M3 - Conference contribution

BT - Proceedings - IEEE Military Communications Conference

PB - IEEE

CY - New York, NY, USA

ER -