Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates

Paul W. Marshall, Martin A. Carts, Arthur Campbell, Dale McMorrow, Steve Buchner, Ryan Stewart, Barbara Randall, Barry Gilbert, Robert A. Reed

Research output: Contribution to journalConference article

88 Scopus citations

Abstract

This attempt at circuit level single event effects (SEE) hardening of SiGe HBT logic provides the first reported indication of the level of sensitivity in this important technology. Characterization over data rate up to 3 Gbps and over a broad range of heavy ion LET's provides important clues to upset mechanisms and implications for upset rate predictions. We augment ion test data with pulsed laser SEE testing to indicate the sensitive targets within the circuit and to provide insights into the upset mechanism(s).

Original languageEnglish (US)
Pages (from-to)2669-2674
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume47
Issue number6 III
DOIs
StatePublished - Dec 1 2000
Event2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC) - Reno, NV, United States
Duration: Jul 24 2000Jul 28 2000

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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    Marshall, P. W., Carts, M. A., Campbell, A., McMorrow, D., Buchner, S., Stewart, R., Randall, B., Gilbert, B., & Reed, R. A. (2000). Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates. IEEE Transactions on Nuclear Science, 47(6 III), 2669-2674. https://doi.org/10.1109/23.903824