Simulations of Electric Field Domain Suppression in a Superlattice Oscillator Device Using a Distributed Circuit Model

Erik S. Daniel, Barry Kent Gilbert, Jeffrey S. Scott, S. James Allen

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We present a method for simulating static domain formation in distributed negative differential resistance devices using a distributed circuit array model coupled with quantum transport simulations. This simulation method is applied to the case of a superlattice Bloch oscillator to ascertain the efficacy of electric field domain wall suppression by micro shunt side walls. Two independent simulation mechanisms using the same basic distributed circuit model are employed to separate simulation artifacts from true physical trends. Simulations are presented, suggesting that the presence of the micro shunt can suppress domain formation above a critical device bias voltage. The simulated dependence of this critical voltage on macroscopic device parameters is presented.

Original languageEnglish (US)
Pages (from-to)2434-2444
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume50
Issue number12
DOIs
StatePublished - Dec 2003

Fingerprint

Electric fields
oscillators
retarding
electric fields
Networks (circuits)
Domain walls
Bias voltage
shunts
simulation
Electric potential
electric potential
domain wall
artifacts
trends

Keywords

  • Bloch oscillator
  • HSPICE
  • Negative differential resistance (NDR)
  • Terahertz

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Simulations of Electric Field Domain Suppression in a Superlattice Oscillator Device Using a Distributed Circuit Model. / Daniel, Erik S.; Gilbert, Barry Kent; Scott, Jeffrey S.; Allen, S. James.

In: IEEE Transactions on Electron Devices, Vol. 50, No. 12, 12.2003, p. 2434-2444.

Research output: Contribution to journalArticle

@article{f3f5752059f743ddb389e395788ce90b,
title = "Simulations of Electric Field Domain Suppression in a Superlattice Oscillator Device Using a Distributed Circuit Model",
abstract = "We present a method for simulating static domain formation in distributed negative differential resistance devices using a distributed circuit array model coupled with quantum transport simulations. This simulation method is applied to the case of a superlattice Bloch oscillator to ascertain the efficacy of electric field domain wall suppression by micro shunt side walls. Two independent simulation mechanisms using the same basic distributed circuit model are employed to separate simulation artifacts from true physical trends. Simulations are presented, suggesting that the presence of the micro shunt can suppress domain formation above a critical device bias voltage. The simulated dependence of this critical voltage on macroscopic device parameters is presented.",
keywords = "Bloch oscillator, HSPICE, Negative differential resistance (NDR), Terahertz",
author = "Daniel, {Erik S.} and Gilbert, {Barry Kent} and Scott, {Jeffrey S.} and Allen, {S. James}",
year = "2003",
month = "12",
doi = "10.1109/TED.2003.819255",
language = "English (US)",
volume = "50",
pages = "2434--2444",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

TY - JOUR

T1 - Simulations of Electric Field Domain Suppression in a Superlattice Oscillator Device Using a Distributed Circuit Model

AU - Daniel, Erik S.

AU - Gilbert, Barry Kent

AU - Scott, Jeffrey S.

AU - Allen, S. James

PY - 2003/12

Y1 - 2003/12

N2 - We present a method for simulating static domain formation in distributed negative differential resistance devices using a distributed circuit array model coupled with quantum transport simulations. This simulation method is applied to the case of a superlattice Bloch oscillator to ascertain the efficacy of electric field domain wall suppression by micro shunt side walls. Two independent simulation mechanisms using the same basic distributed circuit model are employed to separate simulation artifacts from true physical trends. Simulations are presented, suggesting that the presence of the micro shunt can suppress domain formation above a critical device bias voltage. The simulated dependence of this critical voltage on macroscopic device parameters is presented.

AB - We present a method for simulating static domain formation in distributed negative differential resistance devices using a distributed circuit array model coupled with quantum transport simulations. This simulation method is applied to the case of a superlattice Bloch oscillator to ascertain the efficacy of electric field domain wall suppression by micro shunt side walls. Two independent simulation mechanisms using the same basic distributed circuit model are employed to separate simulation artifacts from true physical trends. Simulations are presented, suggesting that the presence of the micro shunt can suppress domain formation above a critical device bias voltage. The simulated dependence of this critical voltage on macroscopic device parameters is presented.

KW - Bloch oscillator

KW - HSPICE

KW - Negative differential resistance (NDR)

KW - Terahertz

UR - http://www.scopus.com/inward/record.url?scp=0347338038&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347338038&partnerID=8YFLogxK

U2 - 10.1109/TED.2003.819255

DO - 10.1109/TED.2003.819255

M3 - Article

AN - SCOPUS:0347338038

VL - 50

SP - 2434

EP - 2444

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 12

ER -