Simulations of Electric Field Domain Suppression in a Superlattice Oscillator Device Using a Distributed Circuit Model

Erik S. Daniel, Barry K. Gilbert, Jeffrey S. Scott, S. James Allen

Research output: Contribution to journalArticle

13 Scopus citations


We present a method for simulating static domain formation in distributed negative differential resistance devices using a distributed circuit array model coupled with quantum transport simulations. This simulation method is applied to the case of a superlattice Bloch oscillator to ascertain the efficacy of electric field domain wall suppression by micro shunt side walls. Two independent simulation mechanisms using the same basic distributed circuit model are employed to separate simulation artifacts from true physical trends. Simulations are presented, suggesting that the presence of the micro shunt can suppress domain formation above a critical device bias voltage. The simulated dependence of this critical voltage on macroscopic device parameters is presented.

Original languageEnglish (US)
Pages (from-to)2434-2444
Number of pages11
JournalIEEE Transactions on Electron Devices
Issue number12
StatePublished - Dec 1 2003



  • Bloch oscillator
  • Negative differential resistance (NDR)
  • Terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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