Semiconductor nonlinear device modeling using multiwavelets

Ke Wang, George W. Pan, R. Techentin, B. Gilbert

Research output: Contribution to journalArticle

Abstract

Modeling and simulation of semiconductor devices requires solution of highly nonlinear equations, such as the Boltzmann transport, hydrodynamic, and drift-diffusion equations. The conventional finite-element method (FEM) and finite difference (FD) schemes always result in oscillatory results, and are ineffective when the cell Reynolds number of the system is large. Several ad hoc schemes have been employed to address the instability issue, including the Scharfetter-Gummel transformation, Petrov-Galerkin method, and upwind algorithms; but each suffers from its shortcomings. We propose a new approach of the multiwavelet-based finite-element method (MWFEM) to solve the semiconductor drift-diffusion system. In this approach, multiscalets are employed as the basis functions. Due to its ability of tracking the tendency, namely, the first derivative of the unknown function, the MWFEM shares the versatility of the conventional FEM while remaining stable in a highly nonlinear system. Comparison with the Scharfetter-Gummel method, upwind FEM, and conventional FEM shows that the MWFEM performs excellently under circumstances of both small- and large-cell Reynolds numbers. A complete 1D drift-diffusion solver base on the MWFEM is implemented. Numerical results demonstrate the high efficiency and accuracy of the new method.

Original languageEnglish (US)
Pages (from-to)436-440
Number of pages5
JournalMicrowave and Optical Technology Letters
Volume37
Issue number6
DOIs
StatePublished - Jun 20 2003

Keywords

  • Multiwavelets
  • Nonlinear device model y
  • Semiconductor devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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