Self-aligned InP DHBT with fτ and fmax over 300 GHz in a new manufacturable technology

Gang He, James Howard, Minh Le, Paul Partyka, Bin Li, Grant Kim, Ronald Hess, Randy Bryie, Rainier Lee, Sam Rustomji, Jeff Pepper, Marty Kail, Max Helix, Richard B. Elder, Douglas S. Jansen, Nathan E. Harff, Jason F. Prairie, Erik S. Daniel, Barry K. Gilbert

Research output: Contribution to journalArticle

57 Scopus citations

Abstract

We report self-aligned indium-phosphide double-heterojunction bipolar transistor devices in a new manufacturable technology with both cutoff frequency (fτ) and maximum oscillation frequency (fmax) over 300 GHz and open-base breakdown voltage (BVceo) over 4 V. Logic circuits fabricated using these devices in a production integrated-circuit process achieved a current-mode logic ring-oscillator gate delay of 1.95 ps and an emitter-coupled logic static-divider frequency of 152 GHz, both of which closely matched model-based circuit simulations.

Original languageEnglish (US)
Pages (from-to)520-522
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number8
DOIs
StatePublished - Aug 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Self-aligned InP DHBT with f<sub>τ</sub> and f<sub>max</sub> over 300 GHz in a new manufacturable technology'. Together they form a unique fingerprint.

  • Cite this

    He, G., Howard, J., Le, M., Partyka, P., Li, B., Kim, G., Hess, R., Bryie, R., Lee, R., Rustomji, S., Pepper, J., Kail, M., Helix, M., Elder, R. B., Jansen, D. S., Harff, N. E., Prairie, J. F., Daniel, E. S., & Gilbert, B. K. (2004). Self-aligned InP DHBT with fτ and fmax over 300 GHz in a new manufacturable technology. IEEE Electron Device Letters, 25(8), 520-522. https://doi.org/10.1109/LED.2004.832528