@article{ca9ca247dc6d4e539cce420c6c3ccc7e,
title = "Self-aligned InP DHBT with fτ and fmax over 300 GHz in a new manufacturable technology",
abstract = "We report self-aligned indium-phosphide double-heterojunction bipolar transistor devices in a new manufacturable technology with both cutoff frequency (fτ) and maximum oscillation frequency (fmax) over 300 GHz and open-base breakdown voltage (BVceo) over 4 V. Logic circuits fabricated using these devices in a production integrated-circuit process achieved a current-mode logic ring-oscillator gate delay of 1.95 ps and an emitter-coupled logic static-divider frequency of 152 GHz, both of which closely matched model-based circuit simulations.",
author = "Gang He and James Howard and Minh Le and Paul Partyka and Bin Li and Grant Kim and Ronald Hess and Randy Bryie and Rainier Lee and Sam Rustomji and Jeff Pepper and Marty Kail and Max Helix and Elder, {Richard B.} and Jansen, {Douglas S.} and Harff, {Nathan E.} and Prairie, {Jason F.} and Daniel, {Erik S.} and Gilbert, {Barry K.}",
note = "Funding Information: Manuscript received April 12, 2004; revised May 17, 2004. This work was supported in part by the Defense Advanced Research Projects Agency (DARPA) under Contract DAAD17-02-C-0115. The review of this letter was arranged by Editor T. Mizutani. G. He, M. Le, P. Partyka, B. Li, G. Kim, R. Hess, R. Bryie, R. Lee, S. Rus-tomji, J. Pepper, and M. Helix are with Vitesse Semiconductor Corporation, Camarillo, CA 93012 USA (e-mail: gang@vitesse.com). J. Howard was with Vitesse Semiconductor Corporation, Camarillo, CA 93012 USA. He is now with Lewis and Clark Law School, Portland, OR 97219 USA. M. Kail was with Vitesse Semiconductor Corporation, Camarillo, CA 93012 USA. He is now with Semtech Corporation, Camarillo, CA 93012 USA. R. B. Elder and D. S. Jansen are with BAE Systems, Nashua, NH 03061 USA. N. E. Harff, J. F. Prairie, E. S. Daniel, and B. K. Gilbert are with Mayo Clinic Special Purpose Processor Development Group (SPPDG), Rochester, MN 55905 USA. Digital Object Identifier 10.1109/LED.2004.832528",
year = "2004",
month = aug,
doi = "10.1109/LED.2004.832528",
language = "English (US)",
volume = "25",
pages = "520--522",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}