Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices

B. Kolasa, P. Savvidis, E. Ulrichs, S. J. Allen, D. Chow, E. Daniel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We propose to bias uniformly a superlattice by etching mesas of an InAs/AlSb superlattice in-situ and subsequently regrowing InAs on the sidewalls. A uniformly biased semiconductor superlattice produces a Stark ladder which can support gain for frequencies just below the Stark splitting. Since the Stark ladder can be easily tuned with the applied bias, the superlattice can be the basis for a terahertz frequency solid state oscillator. Unfortunately, charge accumulation, electric field instabilities, and electric field domain formation occur in superlattices. "Circuit models" of the domain formation suggest that a thin (4-40 nm) layer of InAs on the sidewall of a ∼1 μm wide InAs/AlSb mesa could suppress domain formation without compromising the gain at terahertz frequencies.

Original languageEnglish (US)
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages223-224
Number of pages2
ISBN (Print)0780375815, 9780780375819
DOIs
StatePublished - 2002
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: Sep 15 2002Sep 20 2002

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period9/15/029/20/02

Fingerprint

Superlattices
Ladders
Solid state oscillators
Electric fields
Etching
Semiconductor materials
Networks (circuits)
indium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Kolasa, B., Savvidis, P., Ulrichs, E., Allen, S. J., Chow, D., & Daniel, E. (2002). Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 223-224). [1037840] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037840

Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices. / Kolasa, B.; Savvidis, P.; Ulrichs, E.; Allen, S. J.; Chow, D.; Daniel, E.

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 223-224 1037840.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kolasa, B, Savvidis, P, Ulrichs, E, Allen, SJ, Chow, D & Daniel, E 2002, Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037840, Institute of Electrical and Electronics Engineers Inc., pp. 223-224, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 9/15/02. https://doi.org/10.1109/MBE.2002.1037840
Kolasa B, Savvidis P, Ulrichs E, Allen SJ, Chow D, Daniel E. Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc. 2002. p. 223-224. 1037840 https://doi.org/10.1109/MBE.2002.1037840
Kolasa, B. ; Savvidis, P. ; Ulrichs, E. ; Allen, S. J. ; Chow, D. ; Daniel, E. / Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 223-224
@inproceedings{360ffdab5c7d499b930270bb76dd5f92,
title = "Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices",
abstract = "We propose to bias uniformly a superlattice by etching mesas of an InAs/AlSb superlattice in-situ and subsequently regrowing InAs on the sidewalls. A uniformly biased semiconductor superlattice produces a Stark ladder which can support gain for frequencies just below the Stark splitting. Since the Stark ladder can be easily tuned with the applied bias, the superlattice can be the basis for a terahertz frequency solid state oscillator. Unfortunately, charge accumulation, electric field instabilities, and electric field domain formation occur in superlattices. {"}Circuit models{"} of the domain formation suggest that a thin (4-40 nm) layer of InAs on the sidewall of a ∼1 μm wide InAs/AlSb mesa could suppress domain formation without compromising the gain at terahertz frequencies.",
author = "B. Kolasa and P. Savvidis and E. Ulrichs and Allen, {S. J.} and D. Chow and E. Daniel",
year = "2002",
doi = "10.1109/MBE.2002.1037840",
language = "English (US)",
isbn = "0780375815",
pages = "223--224",
booktitle = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices

AU - Kolasa, B.

AU - Savvidis, P.

AU - Ulrichs, E.

AU - Allen, S. J.

AU - Chow, D.

AU - Daniel, E.

PY - 2002

Y1 - 2002

N2 - We propose to bias uniformly a superlattice by etching mesas of an InAs/AlSb superlattice in-situ and subsequently regrowing InAs on the sidewalls. A uniformly biased semiconductor superlattice produces a Stark ladder which can support gain for frequencies just below the Stark splitting. Since the Stark ladder can be easily tuned with the applied bias, the superlattice can be the basis for a terahertz frequency solid state oscillator. Unfortunately, charge accumulation, electric field instabilities, and electric field domain formation occur in superlattices. "Circuit models" of the domain formation suggest that a thin (4-40 nm) layer of InAs on the sidewall of a ∼1 μm wide InAs/AlSb mesa could suppress domain formation without compromising the gain at terahertz frequencies.

AB - We propose to bias uniformly a superlattice by etching mesas of an InAs/AlSb superlattice in-situ and subsequently regrowing InAs on the sidewalls. A uniformly biased semiconductor superlattice produces a Stark ladder which can support gain for frequencies just below the Stark splitting. Since the Stark ladder can be easily tuned with the applied bias, the superlattice can be the basis for a terahertz frequency solid state oscillator. Unfortunately, charge accumulation, electric field instabilities, and electric field domain formation occur in superlattices. "Circuit models" of the domain formation suggest that a thin (4-40 nm) layer of InAs on the sidewall of a ∼1 μm wide InAs/AlSb mesa could suppress domain formation without compromising the gain at terahertz frequencies.

UR - http://www.scopus.com/inward/record.url?scp=84968610496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84968610496&partnerID=8YFLogxK

U2 - 10.1109/MBE.2002.1037840

DO - 10.1109/MBE.2002.1037840

M3 - Conference contribution

AN - SCOPUS:84968610496

SN - 0780375815

SN - 9780780375819

SP - 223

EP - 224

BT - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

PB - Institute of Electrical and Electronics Engineers Inc.

ER -