Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices

B. Kolasa, P. Savvidis, E. Ulrichs, S. J. Allen, D. Chow, E. Daniel

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We propose to bias uniformly a superlattice by etching mesas of an InAs/AlSb superlattice in-situ and subsequently regrowing InAs on the sidewalls. A uniformly biased semiconductor superlattice produces a Stark ladder which can support gain for frequencies just below the Stark splitting. Since the Stark ladder can be easily tuned with the applied bias, the superlattice can be the basis for a terahertz frequency solid state oscillator. Unfortunately, charge accumulation, electric field instabilities, and electric field domain formation occur in superlattices. "Circuit models" of the domain formation suggest that a thin (4-40 nm) layer of InAs on the sidewall of a ∼1 μm wide InAs/AlSb mesa could suppress domain formation without compromising the gain at terahertz frequencies.

Original languageEnglish (US)
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Print)0780375815, 9780780375819
StatePublished - 2002
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: Sep 15 2002Sep 20 2002


Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/TerritoryUnited States
CitySan Francisco

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry


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