Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices

B. Kolasa; P. Savvidis; E. Ulrichs; S. J. Allen; D. Chow; E. Daniel

doi:10.1109/MBE.2002.1037840

Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices

B. Kolasa, P. Savvidis, E. Ulrichs, S. J. Allen, D. Chow, E. Daniel

Physiology & Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We propose to bias uniformly a superlattice by etching mesas of an InAs/AlSb superlattice in-situ and subsequently regrowing InAs on the sidewalls. A uniformly biased semiconductor superlattice produces a Stark ladder which can support gain for frequencies just below the Stark splitting. Since the Stark ladder can be easily tuned with the applied bias, the superlattice can be the basis for a terahertz frequency solid state oscillator. Unfortunately, charge accumulation, electric field instabilities, and electric field domain formation occur in superlattices. "Circuit models" of the domain formation suggest that a thin (4-40 nm) layer of InAs on the sidewall of a ∼1 μm wide InAs/AlSb mesa could suppress domain formation without compromising the gain at terahertz frequencies.

Original language	English (US)
Title of host publication	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	223-224
Number of pages	2
ISBN (Electronic)	0780375815, 9780780375819
DOIs	https://doi.org/10.1109/MBE.2002.1037840
State	Published - 2002
Event	12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: Sep 15 2002 → Sep 20 2002

Publication series

Name	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other	12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/Territory	United States
City	San Francisco
Period	9/15/02 → 9/20/02

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/MBE.2002.1037840

Cite this

Kolasa, B., Savvidis, P., Ulrichs, E., Allen, S. J., Chow, D., & Daniel, E. (2002). Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 223-224). Article 1037840 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037840

Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices. / Kolasa, B.; Savvidis, P.; Ulrichs, E. et al.
MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 223-224 1037840 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kolasa, B, Savvidis, P, Ulrichs, E, Allen, SJ, Chow, D & Daniel, E 2002, Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037840, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy, Institute of Electrical and Electronics Engineers Inc., pp. 223-224, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 9/15/02. https://doi.org/10.1109/MBE.2002.1037840

Kolasa B, Savvidis P, Ulrichs E, Allen SJ, Chow D, Daniel E. Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc. 2002. p. 223-224. 1037840. (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). doi: 10.1109/MBE.2002.1037840

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abstract = "We propose to bias uniformly a superlattice by etching mesas of an InAs/AlSb superlattice in-situ and subsequently regrowing InAs on the sidewalls. A uniformly biased semiconductor superlattice produces a Stark ladder which can support gain for frequencies just below the Stark splitting. Since the Stark ladder can be easily tuned with the applied bias, the superlattice can be the basis for a terahertz frequency solid state oscillator. Unfortunately, charge accumulation, electric field instabilities, and electric field domain formation occur in superlattices. {"}Circuit models{"} of the domain formation suggest that a thin (4-40 nm) layer of InAs on the sidewall of a ∼1 μm wide InAs/AlSb mesa could suppress domain formation without compromising the gain at terahertz frequencies.",

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AU - Savvidis, P.

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AU - Allen, S. J.

AU - Chow, D.

AU - Daniel, E.

PY - 2002

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N2 - We propose to bias uniformly a superlattice by etching mesas of an InAs/AlSb superlattice in-situ and subsequently regrowing InAs on the sidewalls. A uniformly biased semiconductor superlattice produces a Stark ladder which can support gain for frequencies just below the Stark splitting. Since the Stark ladder can be easily tuned with the applied bias, the superlattice can be the basis for a terahertz frequency solid state oscillator. Unfortunately, charge accumulation, electric field instabilities, and electric field domain formation occur in superlattices. "Circuit models" of the domain formation suggest that a thin (4-40 nm) layer of InAs on the sidewall of a ∼1 μm wide InAs/AlSb mesa could suppress domain formation without compromising the gain at terahertz frequencies.

AB - We propose to bias uniformly a superlattice by etching mesas of an InAs/AlSb superlattice in-situ and subsequently regrowing InAs on the sidewalls. A uniformly biased semiconductor superlattice produces a Stark ladder which can support gain for frequencies just below the Stark splitting. Since the Stark ladder can be easily tuned with the applied bias, the superlattice can be the basis for a terahertz frequency solid state oscillator. Unfortunately, charge accumulation, electric field instabilities, and electric field domain formation occur in superlattices. "Circuit models" of the domain formation suggest that a thin (4-40 nm) layer of InAs on the sidewall of a ∼1 μm wide InAs/AlSb mesa could suppress domain formation without compromising the gain at terahertz frequencies.

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Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlattices

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