Proton tolerance of InAs based HEMT and DHBT devices

Steven M. Currie; Nathan F. Harff; Robert G. Pittelkow; Paul W. Marshall; Joshua Bergman; Berinder Brar; Jonathan B. Hacker; Augusto Gutierrez; Cedric Monier; Barry K. Gilbert; Erik S. Daniel

doi:10.1109/REDW.2006.295470

Proton tolerance of InAs based HEMT and DHBT devices

Steven M. Currie, Nathan F. Harff, Robert G. Pittelkow, Paul W. Marshall, Joshua Bergman, Berinder Brar, Jonathan B. Hacker, Augusto Gutierrez, Cedric Monier, Barry K. Gilbert, Erik S. Daniel

Physiology & Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present measurements of proton induced degradation in emerging low power high performance InAs based devices, including InAs/AlSb high electron mobility transistors (HEMT) and In_0.86Ga_0.14As base 6.0 Å lattice constant double heterojunction bipolar transistor (DHBT) devices.

Original language	English (US)
Title of host publication	2006 IEEE Radiation Effects Data Workshop, NSREC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	66-71
Number of pages	6
ISBN (Print)	1424406382, 9781424406388
DOIs	https://doi.org/10.1109/REDW.2006.295470
State	Published - Jan 1 2006
Event	2006 IEEE Radiation Effects Data Workshop, NSREC - Ponte Vedra Beach, FL, United States Duration: Jul 17 2006 → Jul 21 2006

Publication series

Name	IEEE Radiation Effects Data Workshop

Other

Other	2006 IEEE Radiation Effects Data Workshop, NSREC
Country/Territory	United States
City	Ponte Vedra Beach, FL
Period	7/17/06 → 7/21/06

Keywords

Antimonide-based compound semiconductor (ABCS)
Heteroj unction bipolar transistor (HBT)
High electron mobility transistor (HEMT)
InAs
Proton tolerance

ASJC Scopus subject areas

Radiation

Access to Document

10.1109/REDW.2006.295470

Cite this

Currie, S. M., Harff, N. F., Pittelkow, R. G., Marshall, P. W., Bergman, J., Brar, B., Hacker, J. B., Gutierrez, A., Monier, C., Gilbert, B. K., & Daniel, E. S. (2006). Proton tolerance of InAs based HEMT and DHBT devices. In 2006 IEEE Radiation Effects Data Workshop, NSREC (pp. 66-71). Article 4077284 (IEEE Radiation Effects Data Workshop). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/REDW.2006.295470

Proton tolerance of InAs based HEMT and DHBT devices. / Currie, Steven M.; Harff, Nathan F.; Pittelkow, Robert G. et al.
2006 IEEE Radiation Effects Data Workshop, NSREC. Institute of Electrical and Electronics Engineers Inc., 2006. p. 66-71 4077284 (IEEE Radiation Effects Data Workshop).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Currie, SM, Harff, NF, Pittelkow, RG, Marshall, PW, Bergman, J, Brar, B, Hacker, JB, Gutierrez, A, Monier, C, Gilbert, BK & Daniel, ES 2006, Proton tolerance of InAs based HEMT and DHBT devices. in 2006 IEEE Radiation Effects Data Workshop, NSREC., 4077284, IEEE Radiation Effects Data Workshop, Institute of Electrical and Electronics Engineers Inc., pp. 66-71, 2006 IEEE Radiation Effects Data Workshop, NSREC, Ponte Vedra Beach, FL, United States, 7/17/06. https://doi.org/10.1109/REDW.2006.295470

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title = "Proton tolerance of InAs based HEMT and DHBT devices",

abstract = "We present measurements of proton induced degradation in emerging low power high performance InAs based devices, including InAs/AlSb high electron mobility transistors (HEMT) and In0.86Ga0.14As base 6.0 {\AA} lattice constant double heterojunction bipolar transistor (DHBT) devices.",

keywords = "Antimonide-based compound semiconductor (ABCS), Heteroj unction bipolar transistor (HBT), High electron mobility transistor (HEMT), InAs, Proton tolerance",

author = "Currie, {Steven M.} and Harff, {Nathan F.} and Pittelkow, {Robert G.} and Marshall, {Paul W.} and Joshua Bergman and Berinder Brar and Hacker, {Jonathan B.} and Augusto Gutierrez and Cedric Monier and Gilbert, {Barry K.} and Daniel, {Erik S.}",

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doi = "10.1109/REDW.2006.295470",

language = "English (US)",

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AU - Brar, Berinder

AU - Hacker, Jonathan B.

AU - Gutierrez, Augusto

AU - Monier, Cedric

AU - Gilbert, Barry K.

AU - Daniel, Erik S.

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KW - High electron mobility transistor (HEMT)

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Proton tolerance of InAs based HEMT and DHBT devices

Abstract

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Keywords

ASJC Scopus subject areas

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