Proton tolerance of InAs based HEMT and DHBT devices

Steven M. Currie, Nathan F. Harff, Robert G. Pittelkow, Paul W. Marshall, Joshua Bergman, Berinder Brar, Jonathan B. Hacker, Augusto Gutierrez, Cedric Monier, Barry K. Gilbert, Erik S. Daniel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present measurements of proton induced degradation in emerging low power high performance InAs based devices, including InAs/AlSb high electron mobility transistors (HEMT) and In0.86Ga0.14As base 6.0 Å lattice constant double heterojunction bipolar transistor (DHBT) devices.

Original languageEnglish (US)
Title of host publication2006 IEEE Radiation Effects Data Workshop, NSREC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages66-71
Number of pages6
ISBN (Print)1424406382, 9781424406388
DOIs
StatePublished - Jan 1 2006
Event2006 IEEE Radiation Effects Data Workshop, NSREC - Ponte Vedra Beach, FL, United States
Duration: Jul 17 2006Jul 21 2006

Publication series

NameIEEE Radiation Effects Data Workshop

Other

Other2006 IEEE Radiation Effects Data Workshop, NSREC
CountryUnited States
CityPonte Vedra Beach, FL
Period7/17/067/21/06

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Keywords

  • Antimonide-based compound semiconductor (ABCS)
  • Heteroj unction bipolar transistor (HBT)
  • High electron mobility transistor (HEMT)
  • InAs
  • Proton tolerance

ASJC Scopus subject areas

  • Radiation

Cite this

Currie, S. M., Harff, N. F., Pittelkow, R. G., Marshall, P. W., Bergman, J., Brar, B., Hacker, J. B., Gutierrez, A., Monier, C., Gilbert, B. K., & Daniel, E. S. (2006). Proton tolerance of InAs based HEMT and DHBT devices. In 2006 IEEE Radiation Effects Data Workshop, NSREC (pp. 66-71). [4077284] (IEEE Radiation Effects Data Workshop). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/REDW.2006.295470