Process technology for monolithic high-speed Schottky/resonant tunneling diode logic integrated circuits

P. M. Lei; S. Subramaniam; G. H. Bernstein; W. Williamson; B. K. Gilbert; D. H. Chow

doi:10.1116/1.588787

Process technology for monolithic high-speed Schottky/resonant tunneling diode logic integrated circuits

P. M. Lei, S. Subramaniam, G. H. Bernstein, W. Williamson, B. K. Gilbert, D. H. Chow

Physiology & Biomedical Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A seven-layer process was developed to fabricate monolithic high-speed logic circuits, requiring integration of Schottky diodes and resistors with interband resonant tunneling diodes (RTDs). With this process technology, we have demonstrated a functionally complete logic family based on RTDs with a maximum operating frequency in excess of 12 GHz and a minimum power dissipation on the order of 0.5 mW per gate.

Original language	English (US)
Pages (from-to)	3497-3501
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	14
Issue number	6
DOIs	https://doi.org/10.1116/1.588787
State	Published - 1996

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "A seven-layer process was developed to fabricate monolithic high-speed logic circuits, requiring integration of Schottky diodes and resistors with interband resonant tunneling diodes (RTDs). With this process technology, we have demonstrated a functionally complete logic family based on RTDs with a maximum operating frequency in excess of 12 GHz and a minimum power dissipation on the order of 0.5 mW per gate.",

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AU - Lei, P. M.

AU - Subramaniam, S.

AU - Bernstein, G. H.

AU - Williamson, W.

AU - Gilbert, B. K.

AU - Chow, D. H.

PY - 1996

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AB - A seven-layer process was developed to fabricate monolithic high-speed logic circuits, requiring integration of Schottky diodes and resistors with interband resonant tunneling diodes (RTDs). With this process technology, we have demonstrated a functionally complete logic family based on RTDs with a maximum operating frequency in excess of 12 GHz and a minimum power dissipation on the order of 0.5 mW per gate.

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Process technology for monolithic high-speed Schottky/resonant tunneling diode logic integrated circuits

Abstract

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