Process technology for monolithic high-speed Schottky/resonant tunneling diode logic integrated circuits

P. M. Lei, S. Subramaniam, G. H. Bernstein, W. Williamson, B. K. Gilbert, D. H. Chow

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A seven-layer process was developed to fabricate monolithic high-speed logic circuits, requiring integration of Schottky diodes and resistors with interband resonant tunneling diodes (RTDs). With this process technology, we have demonstrated a functionally complete logic family based on RTDs with a maximum operating frequency in excess of 12 GHz and a minimum power dissipation on the order of 0.5 mW per gate.

Original languageEnglish (US)
Pages (from-to)3497-3501
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume14
Issue number6
DOIs
StatePublished - Jan 1 1996

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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