Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers

Edward P. Wilcox, Stanley D. Phillips, John D. Cressler, Paul W. Marshall, Martin A. Carts, Jonathan A. Pellish, Larry Richmond, William Mathes, Barbara Randall, Devon Post, Barry Gilbert, Erik Daniel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report new results from both broad-beam, heavy-ion and proton experiments for circuit-level RHBD techniques in SiGe digital logic. Redundant circuit elements within the latches are used to significantly reduce single-event upset rates in shift registers and clock paths, without resorting to TMR techniques.

Original languageEnglish (US)
Title of host publication2009 European Conference on Radiation and Its Effects on Components and Systems
Subtitle of host publication10th RADECS Conference, RADECS 2009
Pages504-507
Number of pages4
DOIs
StatePublished - Dec 1 2009
Event2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009 - Bruges, Belgium
Duration: Sep 14 2009Sep 18 2009

Publication series

NameProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009
CountryBelgium
CityBruges
Period9/14/099/18/09

Keywords

  • bit error rate testing
  • gated feedback cell (GFC)
  • radiation hardening by design (RHBD)
  • silicon-germanium (SiGe)
  • single event upset (SEU)

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

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