Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers

Edward P. Wilcox, Stanley D. Phillips, John D. Cressler, Paul W. Marshall, Martin A. Carts, Jonathan A. Pellish, Larry Richmond, William Mathes, Barbara Randall, Devon Post, Barry Kent Gilbert, Erik Daniel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report new results from both broad-beam, heavy-ion and proton experiments for circuit-level RHBD techniques in SiGe digital logic. Redundant circuit elements within the latches are used to significantly reduce single-event upset rates in shift registers and clock paths, without resorting to TMR techniques.

Original languageEnglish (US)
Title of host publicationProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
Pages504-507
Number of pages4
DOIs
StatePublished - 2009
Event2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009 - Bruges, Belgium
Duration: Sep 14 2009Sep 18 2009

Other

Other2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009
CountryBelgium
CityBruges
Period9/14/099/18/09

Fingerprint

shift registers
Shift registers
Heterojunction bipolar transistors
hardening
clocks
Hardening
Clocks
buffers
latches
single event upsets
Networks (circuits)
Flip flop circuits
Heavy ions
logic
heavy ions
Protons
protons
Experiments

Keywords

  • bit error rate testing
  • gated feedback cell (GFC)
  • radiation hardening by design (RHBD)
  • silicon-germanium (SiGe)
  • single event upset (SEU)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Cite this

Wilcox, E. P., Phillips, S. D., Cressler, J. D., Marshall, P. W., Carts, M. A., Pellish, J. A., ... Daniel, E. (2009). Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. In Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS (pp. 504-507). [5994703] https://doi.org/10.1109/RADECS.2009.5994703

Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. / Wilcox, Edward P.; Phillips, Stanley D.; Cressler, John D.; Marshall, Paul W.; Carts, Martin A.; Pellish, Jonathan A.; Richmond, Larry; Mathes, William; Randall, Barbara; Post, Devon; Gilbert, Barry Kent; Daniel, Erik.

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. 2009. p. 504-507 5994703.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wilcox, EP, Phillips, SD, Cressler, JD, Marshall, PW, Carts, MA, Pellish, JA, Richmond, L, Mathes, W, Randall, B, Post, D, Gilbert, BK & Daniel, E 2009, Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. in Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS., 5994703, pp. 504-507, 2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009, Bruges, Belgium, 9/14/09. https://doi.org/10.1109/RADECS.2009.5994703
Wilcox EP, Phillips SD, Cressler JD, Marshall PW, Carts MA, Pellish JA et al. Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. In Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. 2009. p. 504-507. 5994703 https://doi.org/10.1109/RADECS.2009.5994703
Wilcox, Edward P. ; Phillips, Stanley D. ; Cressler, John D. ; Marshall, Paul W. ; Carts, Martin A. ; Pellish, Jonathan A. ; Richmond, Larry ; Mathes, William ; Randall, Barbara ; Post, Devon ; Gilbert, Barry Kent ; Daniel, Erik. / Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. 2009. pp. 504-507
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