Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers

Edward P. Wilcox; Stanley D. Phillips; John D. Cressler; Paul W. Marshall; Martin A. Carts; Jonathan A. Pellish; Larry Richmond; William Mathes; Barbara Randall; Devon Post; Barry Gilbert; Erik Daniel

doi:10.1109/RADECS.2009.5994703

Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers

Edward P. Wilcox, Stanley D. Phillips, John D. Cressler, Paul W. Marshall, Martin A. Carts, Jonathan A. Pellish, Larry Richmond, William Mathes, Barbara Randall, Devon Post, Barry Gilbert, Erik Daniel

Physiology & Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report new results from both broad-beam, heavy-ion and proton experiments for circuit-level RHBD techniques in SiGe digital logic. Redundant circuit elements within the latches are used to significantly reduce single-event upset rates in shift registers and clock paths, without resorting to TMR techniques.

Original language	English (US)
Title of host publication	2009 European Conference on Radiation and Its Effects on Components and Systems
Subtitle of host publication	10th RADECS Conference, RADECS 2009
Pages	504-507
Number of pages	4
DOIs	https://doi.org/10.1109/RADECS.2009.5994703
State	Published - 2009
Event	2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009 - Bruges, Belgium Duration: Sep 14 2009 → Sep 18 2009

Publication series

Name	Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other	2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009
Country/Territory	Belgium
City	Bruges
Period	9/14/09 → 9/18/09

Keywords

bit error rate testing
gated feedback cell (GFC)
radiation hardening by design (RHBD)
silicon-germanium (SiGe)
single event upset (SEU)

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/RADECS.2009.5994703

Cite this

Wilcox, E. P., Phillips, S. D., Cressler, J. D., Marshall, P. W., Carts, M. A., Pellish, J. A., Richmond, L., Mathes, W., Randall, B., Post, D., Gilbert, B., & Daniel, E. (2009). Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. In 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009 (pp. 504-507). Article 5994703 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2009.5994703

Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. / Wilcox, Edward P.; Phillips, Stanley D.; Cressler, John D. et al.
2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009. 2009. p. 504-507 5994703 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wilcox, EP, Phillips, SD, Cressler, JD, Marshall, PW, Carts, MA, Pellish, JA, Richmond, L, Mathes, W, Randall, B, Post, D, Gilbert, B & Daniel, E 2009, Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. in 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009., 5994703, Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, pp. 504-507, 2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009, Bruges, Belgium, 9/14/09. https://doi.org/10.1109/RADECS.2009.5994703

Wilcox EP, Phillips SD, Cressler JD, Marshall PW, Carts MA, Pellish JA et al. Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. In 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009. 2009. p. 504-507. 5994703. (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). doi: 10.1109/RADECS.2009.5994703

Wilcox, Edward P. ; Phillips, Stanley D. ; Cressler, John D. et al. / Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009. 2009. pp. 504-507 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

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abstract = "We report new results from both broad-beam, heavy-ion and proton experiments for circuit-level RHBD techniques in SiGe digital logic. Redundant circuit elements within the latches are used to significantly reduce single-event upset rates in shift registers and clock paths, without resorting to TMR techniques.",

keywords = "bit error rate testing, gated feedback cell (GFC), radiation hardening by design (RHBD), silicon-germanium (SiGe), single event upset (SEU)",

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AU - Wilcox, Edward P.

AU - Phillips, Stanley D.

AU - Cressler, John D.

AU - Marshall, Paul W.

AU - Carts, Martin A.

AU - Pellish, Jonathan A.

AU - Richmond, Larry

AU - Mathes, William

AU - Randall, Barbara

AU - Post, Devon

AU - Gilbert, Barry

AU - Daniel, Erik

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AB - We report new results from both broad-beam, heavy-ion and proton experiments for circuit-level RHBD techniques in SiGe digital logic. Redundant circuit elements within the latches are used to significantly reduce single-event upset rates in shift registers and clock paths, without resorting to TMR techniques.

KW - bit error rate testing

KW - gated feedback cell (GFC)

KW - radiation hardening by design (RHBD)

KW - silicon-germanium (SiGe)

KW - single event upset (SEU)

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ER -

Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

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