Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers

Edward P. Wilcox, Stanley D. Phillips, John D. Cressler, Paul W. Marshall, Martin A. Carts, Jonathan A. Pellish, Larry Richmond, William Mathes, Barbara Randall, Devon Post, Barry Kent Gilbert, Erik Daniel

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report new results from both broad-beam, heavy-ion and proton experiments for circuit-level RHBD techniques in SiGe digital logic. Redundant circuit elements within the latches are used to significantly reduce single-event upset rates in shift registers and clock paths, without resorting to TMR techniques.

Original languageEnglish (US)
Article number5550386
Pages (from-to)2119-2123
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume57
Issue number4 PART 1
DOIs
StatePublished - Aug 2010

Fingerprint

shift registers
Shift registers
Heterojunction bipolar transistors
hardening
clocks
Hardening
Clocks
buffers
latches
single event upsets
Networks (circuits)
Flip flop circuits
Heavy ions
logic
heavy ions
Protons
protons
Experiments

Keywords

  • Bit-error rate testing
  • gated feedback cell (GFC)
  • radiation hardening by design (RHBD)
  • silicon-germanium (SiGe)
  • single event upset (SEU)

ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering
  • Nuclear and High Energy Physics

Cite this

Wilcox, E. P., Phillips, S. D., Cressler, J. D., Marshall, P. W., Carts, M. A., Pellish, J. A., ... Daniel, E. (2010). Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. IEEE Transactions on Nuclear Science, 57(4 PART 1), 2119-2123. [5550386]. https://doi.org/10.1109/TNS.2010.2051681

Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. / Wilcox, Edward P.; Phillips, Stanley D.; Cressler, John D.; Marshall, Paul W.; Carts, Martin A.; Pellish, Jonathan A.; Richmond, Larry; Mathes, William; Randall, Barbara; Post, Devon; Gilbert, Barry Kent; Daniel, Erik.

In: IEEE Transactions on Nuclear Science, Vol. 57, No. 4 PART 1, 5550386, 08.2010, p. 2119-2123.

Research output: Contribution to journalArticle

Wilcox, EP, Phillips, SD, Cressler, JD, Marshall, PW, Carts, MA, Pellish, JA, Richmond, L, Mathes, W, Randall, B, Post, D, Gilbert, BK & Daniel, E 2010, 'Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers', IEEE Transactions on Nuclear Science, vol. 57, no. 4 PART 1, 5550386, pp. 2119-2123. https://doi.org/10.1109/TNS.2010.2051681
Wilcox EP, Phillips SD, Cressler JD, Marshall PW, Carts MA, Pellish JA et al. Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. IEEE Transactions on Nuclear Science. 2010 Aug;57(4 PART 1):2119-2123. 5550386. https://doi.org/10.1109/TNS.2010.2051681
Wilcox, Edward P. ; Phillips, Stanley D. ; Cressler, John D. ; Marshall, Paul W. ; Carts, Martin A. ; Pellish, Jonathan A. ; Richmond, Larry ; Mathes, William ; Randall, Barbara ; Post, Devon ; Gilbert, Barry Kent ; Daniel, Erik. / Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. In: IEEE Transactions on Nuclear Science. 2010 ; Vol. 57, No. 4 PART 1. pp. 2119-2123.
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