Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers

Edward P. Wilcox, Stanley D. Phillips, John D. Cressler, Paul W. Marshall, Martin A. Carts, Jonathan A. Pellish, Larry Richmond, William Mathes, Barbara Randall, Devon Post, Barry Gilbert, Erik Daniel

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We report new results from both broad-beam, heavy-ion and proton experiments for circuit-level RHBD techniques in SiGe digital logic. Redundant circuit elements within the latches are used to significantly reduce single-event upset rates in shift registers and clock paths, without resorting to TMR techniques.

Original languageEnglish (US)
Article number5550386
Pages (from-to)2119-2123
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume57
Issue number4 PART 1
DOIs
StatePublished - Aug 1 2010

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Keywords

  • Bit-error rate testing
  • gated feedback cell (GFC)
  • radiation hardening by design (RHBD)
  • silicon-germanium (SiGe)
  • single event upset (SEU)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Wilcox, E. P., Phillips, S. D., Cressler, J. D., Marshall, P. W., Carts, M. A., Pellish, J. A., Richmond, L., Mathes, W., Randall, B., Post, D., Gilbert, B., & Daniel, E. (2010). Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers. IEEE Transactions on Nuclear Science, 57(4 PART 1), 2119-2123. [5550386]. https://doi.org/10.1109/TNS.2010.2051681