Abstract
We report new results from both broad-beam, heavy-ion and proton experiments for circuit-level RHBD techniques in SiGe digital logic. Redundant circuit elements within the latches are used to significantly reduce single-event upset rates in shift registers and clock paths, without resorting to TMR techniques.
Original language | English (US) |
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Article number | 5550386 |
Pages (from-to) | 2119-2123 |
Number of pages | 5 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 57 |
Issue number | 4 PART 1 |
DOIs | |
State | Published - Aug 2010 |
Keywords
- Bit-error rate testing
- gated feedback cell (GFC)
- radiation hardening by design (RHBD)
- silicon-germanium (SiGe)
- single event upset (SEU)
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering