Network analyzer measurement De-embedding utilizing a distributed transmission matrix bisection of a single THRU structure

Erik S. Daniel, Nathan E. Harff, Vladimir Sokolov, Shaun M. Schreiber, Barry Kent Gilbert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Citations (Scopus)

Abstract

We present a novel de-embedding method applicable to high frequency network analyzer measurements involving bisection of a THRU structure. Although similar methods have been published prior to this paper, to our knowledge this new method is unique in that one single de-embedding structure is required (a symmetric THRU), no other simplifying assumptions regarding the THRU structure are required, and no lumped element approximations are required. We present on-wafer measurements of single transistors and transmission line structures in several integrated circuit technologies comparing results using this de-embedding technique to other more commonly used de-embedding techniques (Y, Z subtraction) as well as to on-wafer calibration techniques. Most measurements are to 110 GHz, with select measurements to 220 GHz illustrating the utility of the method well beyond frequencies at which lumped element approximations break down.

Original languageEnglish (US)
Title of host publication63rd ARFTG Conference Digest, Spring 2004, Automatic RF Techniques Group: On Wafer Characterization
Pages61-68
Number of pages8
StatePublished - 2004
Event63rd ARFTG Conference Digest, Spring 2004, Automatic RF Techniques Group: On Wafer Characterization - Fort Worth, TX, United States
Duration: Jun 11 2004Jun 11 2004

Other

Other63rd ARFTG Conference Digest, Spring 2004, Automatic RF Techniques Group: On Wafer Characterization
CountryUnited States
CityFort Worth, TX
Period6/11/046/11/04

Fingerprint

Electric network analyzers
Integrated circuits
Electric lines
Transistors
Calibration

Keywords

  • De-embedding
  • On-wafer measurement
  • S-parameters
  • Transmission line
  • Transmission matrix
  • Vector network analyzer

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Daniel, E. S., Harff, N. E., Sokolov, V., Schreiber, S. M., & Gilbert, B. K. (2004). Network analyzer measurement De-embedding utilizing a distributed transmission matrix bisection of a single THRU structure. In 63rd ARFTG Conference Digest, Spring 2004, Automatic RF Techniques Group: On Wafer Characterization (pp. 61-68)

Network analyzer measurement De-embedding utilizing a distributed transmission matrix bisection of a single THRU structure. / Daniel, Erik S.; Harff, Nathan E.; Sokolov, Vladimir; Schreiber, Shaun M.; Gilbert, Barry Kent.

63rd ARFTG Conference Digest, Spring 2004, Automatic RF Techniques Group: On Wafer Characterization. 2004. p. 61-68.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Daniel, ES, Harff, NE, Sokolov, V, Schreiber, SM & Gilbert, BK 2004, Network analyzer measurement De-embedding utilizing a distributed transmission matrix bisection of a single THRU structure. in 63rd ARFTG Conference Digest, Spring 2004, Automatic RF Techniques Group: On Wafer Characterization. pp. 61-68, 63rd ARFTG Conference Digest, Spring 2004, Automatic RF Techniques Group: On Wafer Characterization, Fort Worth, TX, United States, 6/11/04.
Daniel ES, Harff NE, Sokolov V, Schreiber SM, Gilbert BK. Network analyzer measurement De-embedding utilizing a distributed transmission matrix bisection of a single THRU structure. In 63rd ARFTG Conference Digest, Spring 2004, Automatic RF Techniques Group: On Wafer Characterization. 2004. p. 61-68
Daniel, Erik S. ; Harff, Nathan E. ; Sokolov, Vladimir ; Schreiber, Shaun M. ; Gilbert, Barry Kent. / Network analyzer measurement De-embedding utilizing a distributed transmission matrix bisection of a single THRU structure. 63rd ARFTG Conference Digest, Spring 2004, Automatic RF Techniques Group: On Wafer Characterization. 2004. pp. 61-68
@inproceedings{47b8313b001546b5bc325a57d35f7470,
title = "Network analyzer measurement De-embedding utilizing a distributed transmission matrix bisection of a single THRU structure",
abstract = "We present a novel de-embedding method applicable to high frequency network analyzer measurements involving bisection of a THRU structure. Although similar methods have been published prior to this paper, to our knowledge this new method is unique in that one single de-embedding structure is required (a symmetric THRU), no other simplifying assumptions regarding the THRU structure are required, and no lumped element approximations are required. We present on-wafer measurements of single transistors and transmission line structures in several integrated circuit technologies comparing results using this de-embedding technique to other more commonly used de-embedding techniques (Y, Z subtraction) as well as to on-wafer calibration techniques. Most measurements are to 110 GHz, with select measurements to 220 GHz illustrating the utility of the method well beyond frequencies at which lumped element approximations break down.",
keywords = "De-embedding, On-wafer measurement, S-parameters, Transmission line, Transmission matrix, Vector network analyzer",
author = "Daniel, {Erik S.} and Harff, {Nathan E.} and Vladimir Sokolov and Schreiber, {Shaun M.} and Gilbert, {Barry Kent}",
year = "2004",
language = "English (US)",
isbn = "0780383710",
pages = "61--68",
booktitle = "63rd ARFTG Conference Digest, Spring 2004, Automatic RF Techniques Group: On Wafer Characterization",

}

TY - GEN

T1 - Network analyzer measurement De-embedding utilizing a distributed transmission matrix bisection of a single THRU structure

AU - Daniel, Erik S.

AU - Harff, Nathan E.

AU - Sokolov, Vladimir

AU - Schreiber, Shaun M.

AU - Gilbert, Barry Kent

PY - 2004

Y1 - 2004

N2 - We present a novel de-embedding method applicable to high frequency network analyzer measurements involving bisection of a THRU structure. Although similar methods have been published prior to this paper, to our knowledge this new method is unique in that one single de-embedding structure is required (a symmetric THRU), no other simplifying assumptions regarding the THRU structure are required, and no lumped element approximations are required. We present on-wafer measurements of single transistors and transmission line structures in several integrated circuit technologies comparing results using this de-embedding technique to other more commonly used de-embedding techniques (Y, Z subtraction) as well as to on-wafer calibration techniques. Most measurements are to 110 GHz, with select measurements to 220 GHz illustrating the utility of the method well beyond frequencies at which lumped element approximations break down.

AB - We present a novel de-embedding method applicable to high frequency network analyzer measurements involving bisection of a THRU structure. Although similar methods have been published prior to this paper, to our knowledge this new method is unique in that one single de-embedding structure is required (a symmetric THRU), no other simplifying assumptions regarding the THRU structure are required, and no lumped element approximations are required. We present on-wafer measurements of single transistors and transmission line structures in several integrated circuit technologies comparing results using this de-embedding technique to other more commonly used de-embedding techniques (Y, Z subtraction) as well as to on-wafer calibration techniques. Most measurements are to 110 GHz, with select measurements to 220 GHz illustrating the utility of the method well beyond frequencies at which lumped element approximations break down.

KW - De-embedding

KW - On-wafer measurement

KW - S-parameters

KW - Transmission line

KW - Transmission matrix

KW - Vector network analyzer

UR - http://www.scopus.com/inward/record.url?scp=18844385434&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18844385434&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:18844385434

SN - 0780383710

SP - 61

EP - 68

BT - 63rd ARFTG Conference Digest, Spring 2004, Automatic RF Techniques Group: On Wafer Characterization

ER -