Low-power W-band CPWG InAs/AlSb HEMT low-noise amplifier

Paul J. Riemer; Benjamin R. Buhrow; Jonathan B. Hacker; Joshua Bergman; Berinder Brar; Barry K. Gilbert; Erik S. Daniel

doi:10.1109/LMWC.2005.861343

Low-power W-band CPWG InAs/AlSb HEMT low-noise amplifier

Paul J. Riemer, Benjamin R. Buhrow, Jonathan B. Hacker, Joshua Bergman, Berinder Brar, Barry K. Gilbert, Erik S. Daniel

Physiology & Biomedical Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We present the development of a low-power W-band low-noise amplifier (LNA) designed in a 200-nm InAs/AlSb high electron mobility transistor (HEMT) technology fabricated on a 50-μm GaAs substrate. A single-stage coplanar waveguide with ground (CPWG) LNA is described. The LNA exhibits a noise figure of 2.5 dB and an associated gain of 5.6 dB at 90 GHz while consuming 2.0 mW of total dc power. This is, to the best of our knowledge, the lowest reported noise figure for an InAs/AlSb HEMT LNA at 90 GHz. Biased for maximum gain, the single-stage amplifier presents 6.7-dB gain and an output 1-dB gain compression point (P1dB) of -6.7 dBm at 90 GHz. The amplifier provides broad-band gain, greater than 5 dB over the entire W-band.

Original language	English (US)
Pages (from-to)	40-42
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	16
Issue number	1
DOIs	https://doi.org/10.1109/LMWC.2005.861343
State	Published - Jan 2006

Keywords

Antimonide-based compound semiconductor (ABCS)
High electron mobility transistor (HEMT)
InAs/AlSb
Low-noise amplifier (LNA)
W-band

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2005.861343

Cite this

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title = "Low-power W-band CPWG InAs/AlSb HEMT low-noise amplifier",

abstract = "We present the development of a low-power W-band low-noise amplifier (LNA) designed in a 200-nm InAs/AlSb high electron mobility transistor (HEMT) technology fabricated on a 50-μm GaAs substrate. A single-stage coplanar waveguide with ground (CPWG) LNA is described. The LNA exhibits a noise figure of 2.5 dB and an associated gain of 5.6 dB at 90 GHz while consuming 2.0 mW of total dc power. This is, to the best of our knowledge, the lowest reported noise figure for an InAs/AlSb HEMT LNA at 90 GHz. Biased for maximum gain, the single-stage amplifier presents 6.7-dB gain and an output 1-dB gain compression point (P1dB) of -6.7 dBm at 90 GHz. The amplifier provides broad-band gain, greater than 5 dB over the entire W-band.",

keywords = "Antimonide-based compound semiconductor (ABCS), High electron mobility transistor (HEMT), InAs/AlSb, Low-noise amplifier (LNA), W-band",

author = "Riemer, {Paul J.} and Buhrow, {Benjamin R.} and Hacker, {Jonathan B.} and Joshua Bergman and Berinder Brar and Gilbert, {Barry K.} and Daniel, {Erik S.}",

note = "Funding Information: Manuscript received May 27, 2005; revised September 26, 2005. This work was supported in part by DARPA/MTO through Contract N66001-94-C-0051, SPAWAR Systems Center, San Diego, CA. P. J. Riemer, B. R. Buhrow, B. K. Gilbert, and E. S. Daniel are with the Mayo Clinic, Rochester, MN 55905 USA (e-mail: riemer.paul@mayo.edu). J. B. Hacker, J. Bergman, and B. Brar are with the Rockwell Scientific Company, Thousand Oaks, CA 91360 USA. Digital Object Identifier 10.1109/LMWC.2005.861343 Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2006",

month = jan,

doi = "10.1109/LMWC.2005.861343",

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journal = "IEEE Microwave and Wireless Components Letters",

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T1 - Low-power W-band CPWG InAs/AlSb HEMT low-noise amplifier

AU - Riemer, Paul J.

AU - Buhrow, Benjamin R.

AU - Hacker, Jonathan B.

AU - Bergman, Joshua

AU - Brar, Berinder

AU - Gilbert, Barry K.

AU - Daniel, Erik S.

N1 - Funding Information: Manuscript received May 27, 2005; revised September 26, 2005. This work was supported in part by DARPA/MTO through Contract N66001-94-C-0051, SPAWAR Systems Center, San Diego, CA. P. J. Riemer, B. R. Buhrow, B. K. Gilbert, and E. S. Daniel are with the Mayo Clinic, Rochester, MN 55905 USA (e-mail: riemer.paul@mayo.edu). J. B. Hacker, J. Bergman, and B. Brar are with the Rockwell Scientific Company, Thousand Oaks, CA 91360 USA. Digital Object Identifier 10.1109/LMWC.2005.861343 Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2006/1

Y1 - 2006/1

N2 - We present the development of a low-power W-band low-noise amplifier (LNA) designed in a 200-nm InAs/AlSb high electron mobility transistor (HEMT) technology fabricated on a 50-μm GaAs substrate. A single-stage coplanar waveguide with ground (CPWG) LNA is described. The LNA exhibits a noise figure of 2.5 dB and an associated gain of 5.6 dB at 90 GHz while consuming 2.0 mW of total dc power. This is, to the best of our knowledge, the lowest reported noise figure for an InAs/AlSb HEMT LNA at 90 GHz. Biased for maximum gain, the single-stage amplifier presents 6.7-dB gain and an output 1-dB gain compression point (P1dB) of -6.7 dBm at 90 GHz. The amplifier provides broad-band gain, greater than 5 dB over the entire W-band.

AB - We present the development of a low-power W-band low-noise amplifier (LNA) designed in a 200-nm InAs/AlSb high electron mobility transistor (HEMT) technology fabricated on a 50-μm GaAs substrate. A single-stage coplanar waveguide with ground (CPWG) LNA is described. The LNA exhibits a noise figure of 2.5 dB and an associated gain of 5.6 dB at 90 GHz while consuming 2.0 mW of total dc power. This is, to the best of our knowledge, the lowest reported noise figure for an InAs/AlSb HEMT LNA at 90 GHz. Biased for maximum gain, the single-stage amplifier presents 6.7-dB gain and an output 1-dB gain compression point (P1dB) of -6.7 dBm at 90 GHz. The amplifier provides broad-band gain, greater than 5 dB over the entire W-band.

KW - Antimonide-based compound semiconductor (ABCS)

KW - High electron mobility transistor (HEMT)

KW - InAs/AlSb

KW - Low-noise amplifier (LNA)

KW - W-band

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JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

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ER -

Low-power W-band CPWG InAs/AlSb HEMT low-noise amplifier

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Keywords

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