We present the development of a low-power W-band low-noise amplifier (LNA) designed in a 200-nm InAs/AlSb high electron mobility transistor (HEMT) technology fabricated on a 50-μm GaAs substrate. A single-stage coplanar waveguide with ground (CPWG) LNA is described. The LNA exhibits a noise figure of 2.5 dB and an associated gain of 5.6 dB at 90 GHz while consuming 2.0 mW of total dc power. This is, to the best of our knowledge, the lowest reported noise figure for an InAs/AlSb HEMT LNA at 90 GHz. Biased for maximum gain, the single-stage amplifier presents 6.7-dB gain and an output 1-dB gain compression point (P1dB) of -6.7 dBm at 90 GHz. The amplifier provides broad-band gain, greater than 5 dB over the entire W-band.
- Antimonide-based compound semiconductor (ABCS)
- High electron mobility transistor (HEMT)
- Low-noise amplifier (LNA)
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering