Ka-band SiGe HBT power amplifier for single-chip T/R module applications

Paul J. Riemer, James S. Humble, Jason F. Prairie, Jonathan D. Coker, Barbara A. Randall, Barry K. Gilbert, Erik S. Daniel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

We present the development of a Ka-band (28-33 GHz) power amplifier designed in a 200/250 GHz fT/fmax, SiGe BiCMOS technology (IBM 8HP). A 4-way microstrip-based power amplifier using on-chip Wilkinson power combiners is described. To our knowledge, this is the first demonstration of a Ka-band power amplifier in SiGe technology designed for integration into a single-chip transmit/receive (T/R) module. The power amplifier exhibits a -10 dB compression point (P10dB) of 19.4 dBm and a -1 dB compression point (P1dB) of 15.4 dBm. The maximum gain of the amplifier is 46.8 dB at 31.9 GHz with a -3 dB bandwidth of 4.7 GHz.

Original languageEnglish (US)
Title of host publication2007 IEEE MTT-S International Microwave Symposium Digest
Pages1071-1074
Number of pages4
DOIs
StatePublished - Oct 2 2007
Event2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States
Duration: Jun 3 2007Jun 8 2007

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Other

Other2007 IEEE MTT-S International Microwave Symposium, IMS 2007
CountryUnited States
CityHonolulu, HI
Period6/3/076/8/07

Keywords

  • BiCMOS
  • HBT
  • IBM 8HP
  • Ka-Band
  • Power amplifier
  • SiGe
  • Wilkinson power combiner

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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