@inproceedings{70bad044bb1247c3b7ef906f201605d1,
title = "Ka-band SiGe HBT power amplifier for single-chip T/R module applications",
abstract = "We present the development of a Ka-band (28-33 GHz) power amplifier designed in a 200/250 GHz fT/fmax, SiGe BiCMOS technology (IBM 8HP). A 4-way microstrip-based power amplifier using on-chip Wilkinson power combiners is described. To our knowledge, this is the first demonstration of a Ka-band power amplifier in SiGe technology designed for integration into a single-chip transmit/receive (T/R) module. The power amplifier exhibits a -10 dB compression point (P10dB) of 19.4 dBm and a -1 dB compression point (P1dB) of 15.4 dBm. The maximum gain of the amplifier is 46.8 dB at 31.9 GHz with a -3 dB bandwidth of 4.7 GHz.",
keywords = "BiCMOS, HBT, IBM 8HP, Ka-Band, Power amplifier, SiGe, Wilkinson power combiner",
author = "Riemer, {Paul J.} and Humble, {James S.} and Prairie, {Jason F.} and Coker, {Jonathan D.} and Randall, {Barbara A.} and Gilbert, {Barry K.} and Daniel, {Erik S.}",
year = "2007",
doi = "10.1109/MWSYM.2007.380278",
language = "English (US)",
isbn = "1424406889",
series = "IEEE MTT-S International Microwave Symposium Digest",
pages = "1071--1074",
booktitle = "2007 IEEE MTT-S International Microwave Symposium Digest",
note = "2007 IEEE MTT-S International Microwave Symposium, IMS 2007 ; Conference date: 03-06-2007 Through 08-06-2007",
}