Ka-band SiGe HBT power amplifier for single-chip T/R module applications

Paul J. Riemer, James S. Humble, Jason F. Prairie, Jonathan D. Coker, Barbara A. Randall, Barry Kent Gilbert, Erik S. Daniel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

We present the development of a Ka-band (28-33 GHz) power amplifier designed in a 200/250 GHz fT/fmax, SiGe BiCMOS technology (IBM 8HP). A 4-way microstrip-based power amplifier using on-chip Wilkinson power combiners is described. To our knowledge, this is the first demonstration of a Ka-band power amplifier in SiGe technology designed for integration into a single-chip transmit/receive (T/R) module. The power amplifier exhibits a -10 dB compression point (P10dB) of 19.4 dBm and a -1 dB compression point (P1dB) of 15.4 dBm. The maximum gain of the amplifier is 46.8 dB at 31.9 GHz with a -3 dB bandwidth of 4.7 GHz.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
Pages1071-1074
Number of pages4
DOIs
StatePublished - 2007
Event2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States
Duration: Jun 3 2007Jun 8 2007

Other

Other2007 IEEE MTT-S International Microwave Symposium, IMS 2007
CountryUnited States
CityHonolulu, HI
Period6/3/076/8/07

Fingerprint

Heterojunction bipolar transistors
power amplifiers
Power amplifiers
modules
chips
BiCMOS technology
Demonstrations
amplifiers
bandwidth
Bandwidth

Keywords

  • BiCMOS
  • HBT
  • IBM 8HP
  • Ka-Band
  • Power amplifier
  • SiGe
  • Wilkinson power combiner

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Riemer, P. J., Humble, J. S., Prairie, J. F., Coker, J. D., Randall, B. A., Gilbert, B. K., & Daniel, E. S. (2007). Ka-band SiGe HBT power amplifier for single-chip T/R module applications. In IEEE MTT-S International Microwave Symposium Digest (pp. 1071-1074). [4264012] https://doi.org/10.1109/MWSYM.2007.380278

Ka-band SiGe HBT power amplifier for single-chip T/R module applications. / Riemer, Paul J.; Humble, James S.; Prairie, Jason F.; Coker, Jonathan D.; Randall, Barbara A.; Gilbert, Barry Kent; Daniel, Erik S.

IEEE MTT-S International Microwave Symposium Digest. 2007. p. 1071-1074 4264012.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Riemer, PJ, Humble, JS, Prairie, JF, Coker, JD, Randall, BA, Gilbert, BK & Daniel, ES 2007, Ka-band SiGe HBT power amplifier for single-chip T/R module applications. in IEEE MTT-S International Microwave Symposium Digest., 4264012, pp. 1071-1074, 2007 IEEE MTT-S International Microwave Symposium, IMS 2007, Honolulu, HI, United States, 6/3/07. https://doi.org/10.1109/MWSYM.2007.380278
Riemer PJ, Humble JS, Prairie JF, Coker JD, Randall BA, Gilbert BK et al. Ka-band SiGe HBT power amplifier for single-chip T/R module applications. In IEEE MTT-S International Microwave Symposium Digest. 2007. p. 1071-1074. 4264012 https://doi.org/10.1109/MWSYM.2007.380278
Riemer, Paul J. ; Humble, James S. ; Prairie, Jason F. ; Coker, Jonathan D. ; Randall, Barbara A. ; Gilbert, Barry Kent ; Daniel, Erik S. / Ka-band SiGe HBT power amplifier for single-chip T/R module applications. IEEE MTT-S International Microwave Symposium Digest. 2007. pp. 1071-1074
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abstract = "We present the development of a Ka-band (28-33 GHz) power amplifier designed in a 200/250 GHz fT/fmax, SiGe BiCMOS technology (IBM 8HP). A 4-way microstrip-based power amplifier using on-chip Wilkinson power combiners is described. To our knowledge, this is the first demonstration of a Ka-band power amplifier in SiGe technology designed for integration into a single-chip transmit/receive (T/R) module. The power amplifier exhibits a -10 dB compression point (P10dB) of 19.4 dBm and a -1 dB compression point (P1dB) of 15.4 dBm. The maximum gain of the amplifier is 46.8 dB at 31.9 GHz with a -3 dB bandwidth of 4.7 GHz.",
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