Ka-band (35 GHz) low-noise 180 nm SOI CMOS amplifier

P. J. Riemer; J. F. Prairie; B. R. Buhrow; C. L. Chen; C. L. Keast; P. W. Wyatt; B. A. Randall; B. K. Gilbert; E. S. Daniel

doi:10.1109/SOI.2006.284467

Ka-band (35 GHz) low-noise 180 nm SOI CMOS amplifier

P. J. Riemer, J. F. Prairie, B. R. Buhrow, C. L. Chen, C. L. Keast, P. W. Wyatt, B. A. Randall, B. K. Gilbert, E. S. Daniel

Physiology & Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

We present the development of a coplanar waveguide (CPW) Ka-band (35 GHz) low-noise amplifier (LNA) designed in MIT-Lincoln Laboratory (MIT-LL) 180 nm fully depleted silicon-on-insulator (FDSOI) CMOS technology fabricated on a "float zone" (2000 ohm-cm) substrate. The LNA exhibits a noise figure of 6.5 dB and an associated gain of 6.7 dB at 37 GHz while consuming 27.5 mW of DC power. When biased for maxium gain the LNA exhibits 7.3 dB gain at 35.8 GHz.

Original language	English (US)
Title of host publication	2006 IEEE international SOI Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	125-126
Number of pages	2
ISBN (Print)	1424402905, 9781424402908
DOIs	https://doi.org/10.1109/SOI.2006.284467
State	Published - Jan 1 2006
Event	2006 IEEE International Silicon on Insulator Conference, SOI - Niagara Falls, NY, United States Duration: Oct 2 2006 → Oct 5 2006

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Other

Other	2006 IEEE International Silicon on Insulator Conference, SOI
Country/Territory	United States
City	Niagara Falls, NY
Period	10/2/06 → 10/5/06

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/SOI.2006.284467

Cite this

Riemer, P. J., Prairie, J. F., Buhrow, B. R., Chen, C. L., Keast, C. L., Wyatt, P. W., Randall, B. A., Gilbert, B. K., & Daniel, E. S. (2006). Ka-band (35 GHz) low-noise 180 nm SOI CMOS amplifier. In 2006 IEEE international SOI Conference Proceedings (pp. 125-126). Article 4062915 (Proceedings - IEEE International SOI Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOI.2006.284467

Ka-band (35 GHz) low-noise 180 nm SOI CMOS amplifier. / Riemer, P. J.; Prairie, J. F.; Buhrow, B. R. et al.
2006 IEEE international SOI Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2006. p. 125-126 4062915 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Riemer, PJ, Prairie, JF, Buhrow, BR, Chen, CL, Keast, CL, Wyatt, PW, Randall, BA, Gilbert, BK & Daniel, ES 2006, Ka-band (35 GHz) low-noise 180 nm SOI CMOS amplifier. in 2006 IEEE international SOI Conference Proceedings., 4062915, Proceedings - IEEE International SOI Conference, Institute of Electrical and Electronics Engineers Inc., pp. 125-126, 2006 IEEE International Silicon on Insulator Conference, SOI, Niagara Falls, NY, United States, 10/2/06. https://doi.org/10.1109/SOI.2006.284467

@inproceedings{fefa7de8abcc4b94868fe3debdb2b128,

title = "Ka-band (35 GHz) low-noise 180 nm SOI CMOS amplifier",

abstract = "We present the development of a coplanar waveguide (CPW) Ka-band (35 GHz) low-noise amplifier (LNA) designed in MIT-Lincoln Laboratory (MIT-LL) 180 nm fully depleted silicon-on-insulator (FDSOI) CMOS technology fabricated on a {"}float zone{"} (2000 ohm-cm) substrate. The LNA exhibits a noise figure of 6.5 dB and an associated gain of 6.7 dB at 37 GHz while consuming 27.5 mW of DC power. When biased for maxium gain the LNA exhibits 7.3 dB gain at 35.8 GHz.",

author = "Riemer, {P. J.} and Prairie, {J. F.} and Buhrow, {B. R.} and Chen, {C. L.} and Keast, {C. L.} and Wyatt, {P. W.} and Randall, {B. A.} and Gilbert, {B. K.} and Daniel, {E. S.}",

year = "2006",

month = jan,

day = "1",

doi = "10.1109/SOI.2006.284467",

language = "English (US)",

isbn = "1424402905",

series = "Proceedings - IEEE International SOI Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "125--126",

booktitle = "2006 IEEE international SOI Conference Proceedings",

note = "2006 IEEE International Silicon on Insulator Conference, SOI ; Conference date: 02-10-2006 Through 05-10-2006",

}

TY - GEN

T1 - Ka-band (35 GHz) low-noise 180 nm SOI CMOS amplifier

AU - Riemer, P. J.

AU - Prairie, J. F.

AU - Buhrow, B. R.

AU - Chen, C. L.

AU - Keast, C. L.

AU - Wyatt, P. W.

AU - Randall, B. A.

AU - Gilbert, B. K.

AU - Daniel, E. S.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - We present the development of a coplanar waveguide (CPW) Ka-band (35 GHz) low-noise amplifier (LNA) designed in MIT-Lincoln Laboratory (MIT-LL) 180 nm fully depleted silicon-on-insulator (FDSOI) CMOS technology fabricated on a "float zone" (2000 ohm-cm) substrate. The LNA exhibits a noise figure of 6.5 dB and an associated gain of 6.7 dB at 37 GHz while consuming 27.5 mW of DC power. When biased for maxium gain the LNA exhibits 7.3 dB gain at 35.8 GHz.

AB - We present the development of a coplanar waveguide (CPW) Ka-band (35 GHz) low-noise amplifier (LNA) designed in MIT-Lincoln Laboratory (MIT-LL) 180 nm fully depleted silicon-on-insulator (FDSOI) CMOS technology fabricated on a "float zone" (2000 ohm-cm) substrate. The LNA exhibits a noise figure of 6.5 dB and an associated gain of 6.7 dB at 37 GHz while consuming 27.5 mW of DC power. When biased for maxium gain the LNA exhibits 7.3 dB gain at 35.8 GHz.

UR - http://www.scopus.com/inward/record.url?scp=43749083928&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43749083928&partnerID=8YFLogxK

U2 - 10.1109/SOI.2006.284467

DO - 10.1109/SOI.2006.284467

M3 - Conference contribution

SN - 1424402905

SN - 9781424402908

T3 - Proceedings - IEEE International SOI Conference

SP - 125

EP - 126

BT - 2006 IEEE international SOI Conference Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2006 IEEE International Silicon on Insulator Conference, SOI

Y2 - 2 October 2006 through 5 October 2006

ER -

Ka-band (35 GHz) low-noise 180 nm SOI CMOS amplifier

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this