Ka-band (35 GHz) 3-stage SiGe HBT low noise amplifier

Paul J. Riemer, Benjamin R. Buhrow, Jonathan D. Coker, Barbara A. Randall, Robert W. Techentin, Barry Kent Gilbert, Erik S. Daniel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We present design, simulation, and measurement of a Ka-band (35 GHz) low noise amplifier (LNA) fabricated in a 120 GHz ft/fmax SiGe BiCMOS technology (IBM 7HP). To our knowledge, this is the first demonstration of a Ka-band LNA in a SiGe technology, representing the first of a set of desired building blocks for integrating a Ka-band transmit and receive (T/R) module in a single chip environment. At 35 GHz, the 3-stage LNA exhibited 15.1 dB gain, -5.9 dBm output compression (P1dB), 9 dBm third order intercept (IP3), and 5.6 dB noise figure at 25.6 mW DC power. Peak gain and bandwidth of the LNA were found to be 19.0 dB and 10.7 GHz respectively at a center frequency of 31.3 GHz.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
Pages1037-1040
Number of pages4
Volume2005
DOIs
StatePublished - 2005
Event2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States
Duration: Jun 12 2005Jun 17 2005

Other

Other2005 IEEE MTT-S International Microwave Symposium
CountryUnited States
CityLong Beach, CA
Period6/12/056/17/05

Fingerprint

Low noise amplifiers
Heterojunction bipolar transistors
low noise
amplifiers
BiCMOS technology
Noise figure
Demonstrations
modules
direct current
chips
bandwidth
Bandwidth
output
simulation

Keywords

  • 7HP
  • BiCMOS
  • HBT
  • Ka-Band
  • LNA
  • SiGe

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Riemer, P. J., Buhrow, B. R., Coker, J. D., Randall, B. A., Techentin, R. W., Gilbert, B. K., & Daniel, E. S. (2005). Ka-band (35 GHz) 3-stage SiGe HBT low noise amplifier. In IEEE MTT-S International Microwave Symposium Digest (Vol. 2005, pp. 1037-1040). [1516846] https://doi.org/10.1109/MWSYM.2005.1516846

Ka-band (35 GHz) 3-stage SiGe HBT low noise amplifier. / Riemer, Paul J.; Buhrow, Benjamin R.; Coker, Jonathan D.; Randall, Barbara A.; Techentin, Robert W.; Gilbert, Barry Kent; Daniel, Erik S.

IEEE MTT-S International Microwave Symposium Digest. Vol. 2005 2005. p. 1037-1040 1516846.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Riemer, PJ, Buhrow, BR, Coker, JD, Randall, BA, Techentin, RW, Gilbert, BK & Daniel, ES 2005, Ka-band (35 GHz) 3-stage SiGe HBT low noise amplifier. in IEEE MTT-S International Microwave Symposium Digest. vol. 2005, 1516846, pp. 1037-1040, 2005 IEEE MTT-S International Microwave Symposium, Long Beach, CA, United States, 6/12/05. https://doi.org/10.1109/MWSYM.2005.1516846
Riemer PJ, Buhrow BR, Coker JD, Randall BA, Techentin RW, Gilbert BK et al. Ka-band (35 GHz) 3-stage SiGe HBT low noise amplifier. In IEEE MTT-S International Microwave Symposium Digest. Vol. 2005. 2005. p. 1037-1040. 1516846 https://doi.org/10.1109/MWSYM.2005.1516846
Riemer, Paul J. ; Buhrow, Benjamin R. ; Coker, Jonathan D. ; Randall, Barbara A. ; Techentin, Robert W. ; Gilbert, Barry Kent ; Daniel, Erik S. / Ka-band (35 GHz) 3-stage SiGe HBT low noise amplifier. IEEE MTT-S International Microwave Symposium Digest. Vol. 2005 2005. pp. 1037-1040
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