@inproceedings{6bd7d40ffdb148419ac965791e6571fd,
title = "Ka-band (35 GHz) 3-stage SiGe HBT low noise amplifier",
abstract = "We present design, simulation, and measurement of a Ka-band (35 GHz) low noise amplifier (LNA) fabricated in a 120 GHz ft/fmax SiGe BiCMOS technology (IBM 7HP). To our knowledge, this is the first demonstration of a Ka-band LNA in a SiGe technology, representing the first of a set of desired building blocks for integrating a Ka-band transmit and receive (T/R) module in a single chip environment. At 35 GHz, the 3-stage LNA exhibited 15.1 dB gain, -5.9 dBm output compression (P1dB), 9 dBm third order intercept (IP3), and 5.6 dB noise figure at 25.6 mW DC power. Peak gain and bandwidth of the LNA were found to be 19.0 dB and 10.7 GHz respectively at a center frequency of 31.3 GHz.",
keywords = "7HP, BiCMOS, HBT, Ka-Band, LNA, SiGe",
author = "Riemer, {Paul J.} and Buhrow, {Benjamin R.} and Coker, {Jonathan D.} and Randall, {Barbara A.} and Techentin, {Robert W.} and Gilbert, {Barry K.} and Daniel, {Erik S.}",
year = "2005",
doi = "10.1109/MWSYM.2005.1516846",
language = "English (US)",
isbn = "0780388461",
series = "IEEE MTT-S International Microwave Symposium Digest",
pages = "1037--1040",
booktitle = "2005 IEEE MTT-S International Microwave Symposium Digest",
note = "2005 IEEE MTT-S International Microwave Symposium ; Conference date: 12-06-2005 Through 17-06-2005",
}