Integration of InAs/AlSb/GaSb resonant interband tunneling diodes with heterostructure field-effect transistors for ultra-high-speed digital circuit applications

P. Fay, G. H. Bernstein, D. Chow, J. Schulman, P. Mazumder, W. Williamson, B. Gilbert

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Engineering & Materials Science