Integration of InAs/AlSb/GaSb resonant interband tunneling diodes with heterostructure field-effect transistors for ultra-high-speed digital circuit applications

P. Fay; G. H. Bernstein; D. Chow; J. Schulman; P. Mazumder; W. Williamson; B. Gilbert

Integration of InAs/AlSb/GaSb resonant interband tunneling diodes with heterostructure field-effect transistors for ultra-high-speed digital circuit applications

P. Fay, G. H. Bernstein, D. Chow, J. Schulman, P. Mazumder, W. Williamson, B. Gilbert

Physiology & Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Resonant tunnelling diode based logic circuits offer significant advantages for low power, ultra-high-speed applications. In this work, a low-power resonant interband tunneling diode (RITD)-based logic technology capable of operating at clock rates of at least 12 GHz is reported. The circuits are fabricated using InAs/AlSb/GaSb RITDs. Fanout of at least two at a clock rate of 10 GHz is also reported for two AND gates in a two-stage pipelined configuration. Simulation results for an RITD/HFET circuit based on measured characteristics of InAs/AlSb/GaSb RITDs and InAs-channel HFETs for a simple inverting Schmitt trigger are presented to demonstrate the advantages of an integrated RITD/HFET technology. This circuit architecture demonstrates proper operation with power supply voltages as low as 0.5 V. In addition, well defined logic levels and abrupt logic transitions are achieved, despite the limited transconductance and large output conductance typical of InAs-channel HFETs.

Original language	English (US)
Title of host publication	Proceedings of the IEEE Great Lakes Symposium on VLSI
Publisher	IEEE
Pages	162-165
Number of pages	4
ISBN (Print)	0769501044
State	Published - Dec 1 1999
Event	Proceedings of the 1999 9th Great Lakes Symposium on VLSI (GLSVLSI '99) - Ann Arbor, MI, USA Duration: Mar 4 1999 → Mar 6 1999

Publication series

Name	Proceedings of the IEEE Great Lakes Symposium on VLSI
ISSN (Print)	1066-1395

Other

Other	Proceedings of the 1999 9th Great Lakes Symposium on VLSI (GLSVLSI '99)
City	Ann Arbor, MI, USA
Period	3/4/99 → 3/6/99

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Fay, P., Bernstein, G. H., Chow, D., Schulman, J., Mazumder, P., Williamson, W., & Gilbert, B. (1999). Integration of InAs/AlSb/GaSb resonant interband tunneling diodes with heterostructure field-effect transistors for ultra-high-speed digital circuit applications. In Proceedings of the IEEE Great Lakes Symposium on VLSI (pp. 162-165). (Proceedings of the IEEE Great Lakes Symposium on VLSI). IEEE.

Integration of InAs/AlSb/GaSb resonant interband tunneling diodes with heterostructure field-effect transistors for ultra-high-speed digital circuit applications. / Fay, P.; Bernstein, G. H.; Chow, D. et al.
Proceedings of the IEEE Great Lakes Symposium on VLSI. IEEE, 1999. p. 162-165 (Proceedings of the IEEE Great Lakes Symposium on VLSI).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fay, P, Bernstein, GH, Chow, D, Schulman, J, Mazumder, P, Williamson, W & Gilbert, B 1999, Integration of InAs/AlSb/GaSb resonant interband tunneling diodes with heterostructure field-effect transistors for ultra-high-speed digital circuit applications. in Proceedings of the IEEE Great Lakes Symposium on VLSI. Proceedings of the IEEE Great Lakes Symposium on VLSI, IEEE, pp. 162-165, Proceedings of the 1999 9th Great Lakes Symposium on VLSI (GLSVLSI '99), Ann Arbor, MI, USA, 3/4/99.

Fay P, Bernstein GH, Chow D, Schulman J, Mazumder P, Williamson W et al. Integration of InAs/AlSb/GaSb resonant interband tunneling diodes with heterostructure field-effect transistors for ultra-high-speed digital circuit applications. In Proceedings of the IEEE Great Lakes Symposium on VLSI. IEEE. 1999. p. 162-165. (Proceedings of the IEEE Great Lakes Symposium on VLSI).

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title = "Integration of InAs/AlSb/GaSb resonant interband tunneling diodes with heterostructure field-effect transistors for ultra-high-speed digital circuit applications",

abstract = "Resonant tunnelling diode based logic circuits offer significant advantages for low power, ultra-high-speed applications. In this work, a low-power resonant interband tunneling diode (RITD)-based logic technology capable of operating at clock rates of at least 12 GHz is reported. The circuits are fabricated using InAs/AlSb/GaSb RITDs. Fanout of at least two at a clock rate of 10 GHz is also reported for two AND gates in a two-stage pipelined configuration. Simulation results for an RITD/HFET circuit based on measured characteristics of InAs/AlSb/GaSb RITDs and InAs-channel HFETs for a simple inverting Schmitt trigger are presented to demonstrate the advantages of an integrated RITD/HFET technology. This circuit architecture demonstrates proper operation with power supply voltages as low as 0.5 V. In addition, well defined logic levels and abrupt logic transitions are achieved, despite the limited transconductance and large output conductance typical of InAs-channel HFETs.",

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AU - Mazumder, P.

AU - Williamson, W.

AU - Gilbert, B.

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N2 - Resonant tunnelling diode based logic circuits offer significant advantages for low power, ultra-high-speed applications. In this work, a low-power resonant interband tunneling diode (RITD)-based logic technology capable of operating at clock rates of at least 12 GHz is reported. The circuits are fabricated using InAs/AlSb/GaSb RITDs. Fanout of at least two at a clock rate of 10 GHz is also reported for two AND gates in a two-stage pipelined configuration. Simulation results for an RITD/HFET circuit based on measured characteristics of InAs/AlSb/GaSb RITDs and InAs-channel HFETs for a simple inverting Schmitt trigger are presented to demonstrate the advantages of an integrated RITD/HFET technology. This circuit architecture demonstrates proper operation with power supply voltages as low as 0.5 V. In addition, well defined logic levels and abrupt logic transitions are achieved, despite the limited transconductance and large output conductance typical of InAs-channel HFETs.

AB - Resonant tunnelling diode based logic circuits offer significant advantages for low power, ultra-high-speed applications. In this work, a low-power resonant interband tunneling diode (RITD)-based logic technology capable of operating at clock rates of at least 12 GHz is reported. The circuits are fabricated using InAs/AlSb/GaSb RITDs. Fanout of at least two at a clock rate of 10 GHz is also reported for two AND gates in a two-stage pipelined configuration. Simulation results for an RITD/HFET circuit based on measured characteristics of InAs/AlSb/GaSb RITDs and InAs-channel HFETs for a simple inverting Schmitt trigger are presented to demonstrate the advantages of an integrated RITD/HFET technology. This circuit architecture demonstrates proper operation with power supply voltages as low as 0.5 V. In addition, well defined logic levels and abrupt logic transitions are achieved, despite the limited transconductance and large output conductance typical of InAs-channel HFETs.

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Integration of InAs/AlSb/GaSb resonant interband tunneling diodes with heterostructure field-effect transistors for ultra-high-speed digital circuit applications

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