InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits

D. H. Chow; H. L. Dunlap; W. Williamson; S. Enquist; B. K. Gilbert; S. Subramaniam; P. M. Lei; G. H. Bernstein

doi:10.1109/55.484126

InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits

D. H. Chow, H. L. Dunlap, W. Williamson, S. Enquist, B. K. Gilbert, S. Subramaniam, P. M. Lei, G. H. Bernstein

Physiology & Biomedical Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

Integrated resonant interband tunneling (RIT) and Schottky diode structures, based on the InAs/GaSb/AlSb heterostructure system, are demonstrated for the firts time. The RIT diodes are advantageous for logic circuits due to the relatively low bias volates (∼100 mV) required to attain peak current densities in the mid-10⁴A/cm² range. The use of n-type InAs/AlSb superlattices for the semiconducting side of Schottky barrier devices provides a means for tailoring the barrier height fo a given circuit architecture. The monolithically integrated RIT/Schottky structure is suitable for fabrication of a complete diode logic family (AND, OR, XOR, INV).

Original language	English (US)
Pages (from-to)	69-71
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/55.484126
State	Published - Feb 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits",

abstract = "Integrated resonant interband tunneling (RIT) and Schottky diode structures, based on the InAs/GaSb/AlSb heterostructure system, are demonstrated for the firts time. The RIT diodes are advantageous for logic circuits due to the relatively low bias volates (∼100 mV) required to attain peak current densities in the mid-104A/cm2 range. The use of n-type InAs/AlSb superlattices for the semiconducting side of Schottky barrier devices provides a means for tailoring the barrier height fo a given circuit architecture. The monolithically integrated RIT/Schottky structure is suitable for fabrication of a complete diode logic family (AND, OR, XOR, INV).",

author = "Chow, {D. H.} and Dunlap, {H. L.} and W. Williamson and S. Enquist and Gilbert, {B. K.} and S. Subramaniam and Lei, {P. M.} and Bernstein, {G. H.}",

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AU - Chow, D. H.

AU - Dunlap, H. L.

AU - Williamson, W.

AU - Enquist, S.

AU - Gilbert, B. K.

AU - Subramaniam, S.

AU - Lei, P. M.

AU - Bernstein, G. H.

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AB - Integrated resonant interband tunneling (RIT) and Schottky diode structures, based on the InAs/GaSb/AlSb heterostructure system, are demonstrated for the firts time. The RIT diodes are advantageous for logic circuits due to the relatively low bias volates (∼100 mV) required to attain peak current densities in the mid-104A/cm2 range. The use of n-type InAs/AlSb superlattices for the semiconducting side of Schottky barrier devices provides a means for tailoring the barrier height fo a given circuit architecture. The monolithically integrated RIT/Schottky structure is suitable for fabrication of a complete diode logic family (AND, OR, XOR, INV).

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InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits

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