InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits

D. H. Chow, H. L. Dunlap, W. Williamson, S. Enquist, B. K. Gilbert, S. Subramaniam, P. M. Lei, G. H. Bernstein

Research output: Contribution to journalArticle

50 Scopus citations

Abstract

Integrated resonant interband tunneling (RIT) and Schottky diode structures, based on the InAs/GaSb/AlSb heterostructure system, are demonstrated for the firts time. The RIT diodes are advantageous for logic circuits due to the relatively low bias volates (∼100 mV) required to attain peak current densities in the mid-104A/cm2 range. The use of n-type InAs/AlSb superlattices for the semiconducting side of Schottky barrier devices provides a means for tailoring the barrier height fo a given circuit architecture. The monolithically integrated RIT/Schottky structure is suitable for fabrication of a complete diode logic family (AND, OR, XOR, INV).

Original languageEnglish (US)
Pages (from-to)69-71
Number of pages3
JournalIEEE Electron Device Letters
Volume17
Issue number2
DOIs
StatePublished - Feb 1 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Chow, D. H., Dunlap, H. L., Williamson, W., Enquist, S., Gilbert, B. K., Subramaniam, S., Lei, P. M., & Bernstein, G. H. (1996). InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits. IEEE Electron Device Letters, 17(2), 69-71. https://doi.org/10.1109/55.484126