Integrated resonant interband tunneling (RIT) and Schottky diode structures, based on the InAs/GaSb/AlSb heterostructure system, are demonstrated for the firts time. The RIT diodes are advantageous for logic circuits due to the relatively low bias volates (∼100 mV) required to attain peak current densities in the mid-104A/cm2 range. The use of n-type InAs/AlSb superlattices for the semiconducting side of Schottky barrier devices provides a means for tailoring the barrier height fo a given circuit architecture. The monolithically integrated RIT/Schottky structure is suitable for fabrication of a complete diode logic family (AND, OR, XOR, INV).
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering