Implementation of a gallium arsenide multichip digital circuit operating at 500-1000 MHz clock rates using a Si/Cu/SiO 2 MCM-D technology

Barry K. Gilbert; Barbara A. Randall; Brent L. Donham; Daniel J. Schwab; Donald C. Benson; David B. Tuckerman; W. Parks Goodwin

doi:10.1109/96.554517

Implementation of a gallium arsenide multichip digital circuit operating at 500-1000 MHz clock rates using a Si/Cu/SiO ₂ MCM-D technology

Barry K. Gilbert, Barbara A. Randall, Brent L. Donham, Daniel J. Schwab, Donald C. Benson, David B. Tuckerman, W. Parks Goodwin

Physiology & Biomedical Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Two different deposited multichip modules (MCM's) were fabricated in nCHIP's nC3000 Si/Cu/SiO ₂ process. The first of these MCM's was a passive test coupon containing a variety of microstrip and stripline transmission line structures, allowing the measurement of dc and ac signal amplitude losses in long conductors, as well as assessments of crosstalk and reflections as functions of line dimensions and spacings. The second MCM incorporated sixteen Gallium Arsenide (GaAs) integrated circuits, all designed to work together at clock rates in the hundreds of MHz; all components were attached, face up, with an aluminum wire bonding process. The design, fabrication, assembly and test processes for these modules will be described, as well as the lessons learned about this MCM process for the design of subsystems up to the high hundreds of MHz clock rates.

Original language	English (US)
Pages (from-to)	17-25
Number of pages	9
Journal	IEEE Transactions on Components Packaging and Manufacturing Technology Part B
Volume	20
Issue number	1
DOIs	https://doi.org/10.1109/96.554517
State	Published - Feb 1997

Keywords

Digital signal processors
Gallium arsenide integrated circuits
High clock rates
Multichip modules
Power plane noise
Signal integrity
Waveform conformation

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/96.554517

Cite this

Gilbert, B. K., Randall, B. A., Donham, B. L., Schwab, D. J., Benson, D. C., Tuckerman, D. B., & Goodwin, W. P. (1997). Implementation of a gallium arsenide multichip digital circuit operating at 500-1000 MHz clock rates using a Si/Cu/SiO ₂ MCM-D technology. IEEE Transactions on Components Packaging and Manufacturing Technology Part B, 20(1), 17-25. https://doi.org/10.1109/96.554517

Implementation of a gallium arsenide multichip digital circuit operating at 500-1000 MHz clock rates using a Si/Cu/SiO ₂ MCM-D technology. / Gilbert, Barry K.; Randall, Barbara A.; Donham, Brent L. et al.
In: IEEE Transactions on Components Packaging and Manufacturing Technology Part B, Vol. 20, No. 1, 02.1997, p. 17-25.

Research output: Contribution to journal › Article › peer-review

Gilbert, BK, Randall, BA, Donham, BL, Schwab, DJ, Benson, DC, Tuckerman, DB & Goodwin, WP 1997, 'Implementation of a gallium arsenide multichip digital circuit operating at 500-1000 MHz clock rates using a Si/Cu/SiO ₂ MCM-D technology', IEEE Transactions on Components Packaging and Manufacturing Technology Part B, vol. 20, no. 1, pp. 17-25. https://doi.org/10.1109/96.554517

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abstract = "Two different deposited multichip modules (MCM's) were fabricated in nCHIP's nC3000 Si/Cu/SiO 2 process. The first of these MCM's was a passive test coupon containing a variety of microstrip and stripline transmission line structures, allowing the measurement of dc and ac signal amplitude losses in long conductors, as well as assessments of crosstalk and reflections as functions of line dimensions and spacings. The second MCM incorporated sixteen Gallium Arsenide (GaAs) integrated circuits, all designed to work together at clock rates in the hundreds of MHz; all components were attached, face up, with an aluminum wire bonding process. The design, fabrication, assembly and test processes for these modules will be described, as well as the lessons learned about this MCM process for the design of subsystems up to the high hundreds of MHz clock rates.",

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note = "Funding Information: Manuscript received December 12, 1995; revised December 2, 1996. This paper was supported in part by the Advanced Research Projects Agency through Contracts N66001-89-C-0104 and N66001-94-C-0051 from NC-COSC/NRaD, and Contract MDA972-91-X-0009 from DARPA. B. K. Gilbert, B. A. Randall, and D. J. Schwab are with the Mayo Foundation, Rochester, MN 55905 USA (email: gilbert@mayo.edu). B. L. Donham is with the Department of Engineering Technology, Richland College, Dallas, TX 75231 USA. D. C. Benson and D. B. Tuckerman are with nCHIP/Flextronics, San Jose, CA 95131 USA. W. P. Goodwin is with E-Systems Greenville Division, Greenville, TX 75402 USA. Publisher Item Identifier S 1070-9894(97)01731-3.",

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