Implementation of a gallium arsenide multichip digital circuit operating at 500-1000 MHz clock rates using a Si/Cu/SiO 2 MCM-D technology

Barry K. Gilbert, Barbara A. Randall, Brent L. Donham, Daniel J. Schwab, Donald C. Benson, David B. Tuckerman, W. Parks Goodwin

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Two different deposited multichip modules (MCM's) were fabricated in nCHIP's nC3000 Si/Cu/SiO 2 process. The first of these MCM's was a passive test coupon containing a variety of microstrip and stripline transmission line structures, allowing the measurement of dc and ac signal amplitude losses in long conductors, as well as assessments of crosstalk and reflections as functions of line dimensions and spacings. The second MCM incorporated sixteen Gallium Arsenide (GaAs) integrated circuits, all designed to work together at clock rates in the hundreds of MHz; all components were attached, face up, with an aluminum wire bonding process. The design, fabrication, assembly and test processes for these modules will be described, as well as the lessons learned about this MCM process for the design of subsystems up to the high hundreds of MHz clock rates.

Original languageEnglish (US)
Pages (from-to)17-25
Number of pages9
JournalIEEE Transactions on Components Packaging and Manufacturing Technology Part B
Volume20
Issue number1
DOIs
StatePublished - Feb 1 1997

Keywords

  • Digital signal processors
  • Gallium arsenide integrated circuits
  • High clock rates
  • Multichip modules
  • Power plane noise
  • Signal integrity
  • Waveform conformation

ASJC Scopus subject areas

  • Engineering(all)

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