Abstract
Under the auspices of Defense Advanced Research Project Agency Microsystems Technology Office (DARPA/MTO) Low Power Electronics Program, Mayo Foundation is exploring ways to reduce circuit power consumption, while maintaining or increasing functionality, for existing military systems. Applications presently being explored by Mayo include all-digital radar receivers, electronic warfare receivers, and other types of digital signal processors. One of the integrated circuit technologies currently under investigation by Mayo to support such military systems is the IBM Corporation silicon germanium (SiGe) BiCMOS process. In this paper, design methodology and test results from demonstration circuits developed for these applications and implemented in the IBM SiGe BiCMOS technology will be presented.
Original language | English (US) |
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Title of host publication | Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) |
Place of Publication | Piscataway, NJ, United States |
Publisher | IEEE |
Pages | 41-44 |
Number of pages | 4 |
ISBN (Print) | 0780355865 |
State | Published - 1999 |
Event | Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, USA Duration: Oct 17 1999 → Oct 20 1999 |
Other
Other | Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) |
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City | Monterey, CA, USA |
Period | 10/17/99 → 10/20/99 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
High-speed, low-power digital and analog circuits implemented in IBM SiGe BiCMOS technology. / Fritz, Karl E.; Randall, Barbara A.; Fokken, Gregg J.; Walters, Wayne L.; Lorsung, Michael J.; Nielsen, Ann D.; Prairie, Jason F.; Post, Devon J.; Greenberg, David R.; Gilbert, Barry Kent.
Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Piscataway, NJ, United States : IEEE, 1999. p. 41-44.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High-speed, low-power digital and analog circuits implemented in IBM SiGe BiCMOS technology
AU - Fritz, Karl E.
AU - Randall, Barbara A.
AU - Fokken, Gregg J.
AU - Walters, Wayne L.
AU - Lorsung, Michael J.
AU - Nielsen, Ann D.
AU - Prairie, Jason F.
AU - Post, Devon J.
AU - Greenberg, David R.
AU - Gilbert, Barry Kent
PY - 1999
Y1 - 1999
N2 - Under the auspices of Defense Advanced Research Project Agency Microsystems Technology Office (DARPA/MTO) Low Power Electronics Program, Mayo Foundation is exploring ways to reduce circuit power consumption, while maintaining or increasing functionality, for existing military systems. Applications presently being explored by Mayo include all-digital radar receivers, electronic warfare receivers, and other types of digital signal processors. One of the integrated circuit technologies currently under investigation by Mayo to support such military systems is the IBM Corporation silicon germanium (SiGe) BiCMOS process. In this paper, design methodology and test results from demonstration circuits developed for these applications and implemented in the IBM SiGe BiCMOS technology will be presented.
AB - Under the auspices of Defense Advanced Research Project Agency Microsystems Technology Office (DARPA/MTO) Low Power Electronics Program, Mayo Foundation is exploring ways to reduce circuit power consumption, while maintaining or increasing functionality, for existing military systems. Applications presently being explored by Mayo include all-digital radar receivers, electronic warfare receivers, and other types of digital signal processors. One of the integrated circuit technologies currently under investigation by Mayo to support such military systems is the IBM Corporation silicon germanium (SiGe) BiCMOS process. In this paper, design methodology and test results from demonstration circuits developed for these applications and implemented in the IBM SiGe BiCMOS technology will be presented.
UR - http://www.scopus.com/inward/record.url?scp=0033344289&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033344289&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0033344289
SN - 0780355865
SP - 41
EP - 44
BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
PB - IEEE
CY - Piscataway, NJ, United States
ER -