High-speed, low-power digital and analog circuits implemented in IBM SiGe BiCMOS technology

Karl E. Fritz; Barbara A. Randall; Gregg J. Fokken; Wayne L. Walters; Michael J. Lorsung; Ann D. Nielsen; Jason F. Prairie; Devon J. Post; David R. Greenberg; Barry K. Gilbert

High-speed, low-power digital and analog circuits implemented in IBM SiGe BiCMOS technology

Karl E. Fritz, Barbara A. Randall, Gregg J. Fokken, Wayne L. Walters, Michael J. Lorsung, Ann D. Nielsen, Jason F. Prairie, Devon J. Post, David R. Greenberg, Barry K. Gilbert

Physiology & Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Under the auspices of Defense Advanced Research Project Agency Microsystems Technology Office (DARPA/MTO) Low Power Electronics Program, Mayo Foundation is exploring ways to reduce circuit power consumption, while maintaining or increasing functionality, for existing military systems. Applications presently being explored by Mayo include all-digital radar receivers, electronic warfare receivers, and other types of digital signal processors. One of the integrated circuit technologies currently under investigation by Mayo to support such military systems is the IBM Corporation silicon germanium (SiGe) BiCMOS process. In this paper, design methodology and test results from demonstration circuits developed for these applications and implemented in the IBM SiGe BiCMOS technology will be presented.

Original language	English (US)
Title of host publication	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Publisher	IEEE
Pages	41-44
Number of pages	4
ISBN (Print)	0780355865
State	Published - Dec 1 1999
Event	Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, USA Duration: Oct 17 1999 → Oct 20 1999

Publication series

Name	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Other

Other	Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
City	Monterey, CA, USA
Period	10/17/99 → 10/20/99

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Fritz, K. E., Randall, B. A., Fokken, G. J., Walters, W. L., Lorsung, M. J., Nielsen, A. D., Prairie, J. F., Post, D. J., Greenberg, D. R., & Gilbert, B. K. (1999). High-speed, low-power digital and analog circuits implemented in IBM SiGe BiCMOS technology. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 41-44). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). IEEE.

High-speed, low-power digital and analog circuits implemented in IBM SiGe BiCMOS technology. / Fritz, Karl E.; Randall, Barbara A.; Fokken, Gregg J.; Walters, Wayne L.; Lorsung, Michael J.; Nielsen, Ann D.; Prairie, Jason F.; Post, Devon J.; Greenberg, David R.; Gilbert, Barry K.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, 1999. p. 41-44 (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fritz, KE, Randall, BA, Fokken, GJ, Walters, WL, Lorsung, MJ, Nielsen, AD, Prairie, JF, Post, DJ, Greenberg, DR & Gilbert, BK 1999, High-speed, low-power digital and analog circuits implemented in IBM SiGe BiCMOS technology. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), IEEE, pp. 41-44, Proceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, USA, 10/17/99.

Fritz, Karl E. ; Randall, Barbara A. ; Fokken, Gregg J. ; Walters, Wayne L. ; Lorsung, Michael J. ; Nielsen, Ann D. ; Prairie, Jason F. ; Post, Devon J. ; Greenberg, David R. ; Gilbert, Barry K. / High-speed, low-power digital and analog circuits implemented in IBM SiGe BiCMOS technology. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, 1999. pp. 41-44 (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)).

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abstract = "Under the auspices of Defense Advanced Research Project Agency Microsystems Technology Office (DARPA/MTO) Low Power Electronics Program, Mayo Foundation is exploring ways to reduce circuit power consumption, while maintaining or increasing functionality, for existing military systems. Applications presently being explored by Mayo include all-digital radar receivers, electronic warfare receivers, and other types of digital signal processors. One of the integrated circuit technologies currently under investigation by Mayo to support such military systems is the IBM Corporation silicon germanium (SiGe) BiCMOS process. In this paper, design methodology and test results from demonstration circuits developed for these applications and implemented in the IBM SiGe BiCMOS technology will be presented.",

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