High frequency dielectric properties of thin-film pzt capacitors

W. Williamson; B. K. Gilbert; H. D. Chen; K. R. Udayakumar; L. E. Cross; C. M. Bozler

doi:10.1080/10584589508012291

High frequency dielectric properties of thin-film pzt capacitors

W. Williamson, B. K. Gilbert, H. D. Chen, K. R. Udayakumar, L. E. Cross, C. M. Bozler

Physiology & Biomedical Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We present a method for calculating the dielectric constant and the dissipation factor for thin-film ferroelectric capacitors from scattering parameter measurements at multi-gigahertz frequencies. Physical measurement is discussed along with description of the model upon which the calculation is based. Experimental results for 0.5 micron films of PZT are reported up to 15 GHz. Direct measurement is compared with indirectly calculated values at the 100 MHz to 1.5 GHz range, showing excellent agreement.

Original language	English (US)
Pages (from-to)	335-342
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	10
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589508012291
State	Published - Oct 1995

ASJC Scopus subject areas

Control and Systems Engineering
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584589508012291

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title = "High frequency dielectric properties of thin-film pzt capacitors",

abstract = "We present a method for calculating the dielectric constant and the dissipation factor for thin-film ferroelectric capacitors from scattering parameter measurements at multi-gigahertz frequencies. Physical measurement is discussed along with description of the model upon which the calculation is based. Experimental results for 0.5 micron films of PZT are reported up to 15 GHz. Direct measurement is compared with indirectly calculated values at the 100 MHz to 1.5 GHz range, showing excellent agreement.",

author = "W. Williamson and Gilbert, {B. K.} and Chen, {H. D.} and Udayakumar, {K. R.} and Cross, {L. E.} and Bozler, {C. M.}",

note = "Funding Information: This research was supported in part by the Electronic Systems Technology Office and the Microelectronics Technology Office of the Advanced Research Projects Agency (ARPAESTO and ARPA/MTO) through contracts N66001-89-C-0104 and N66001-94-C-0051 administered by NRaD/NCCOSC. We wish to thank S. Enquist of the Mayo Foundation for invaluable technical assistance; J. Murphy, ARF'AESTO, J. Alexander, ARPNMTO, and N. Ortwein, NRaD Code 80, for advice, encouragement, and helpful discussions; and E. Doherty, D. Jensen, and S. Richardson of the Mayo Foundation for preparation of text and figures.",

year = "1995",

month = oct,

doi = "10.1080/10584589508012291",

language = "English (US)",

volume = "10",

pages = "335--342",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

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T1 - High frequency dielectric properties of thin-film pzt capacitors

AU - Williamson, W.

AU - Gilbert, B. K.

AU - Chen, H. D.

AU - Udayakumar, K. R.

AU - Cross, L. E.

AU - Bozler, C. M.

N1 - Funding Information: This research was supported in part by the Electronic Systems Technology Office and the Microelectronics Technology Office of the Advanced Research Projects Agency (ARPAESTO and ARPA/MTO) through contracts N66001-89-C-0104 and N66001-94-C-0051 administered by NRaD/NCCOSC. We wish to thank S. Enquist of the Mayo Foundation for invaluable technical assistance; J. Murphy, ARF'AESTO, J. Alexander, ARPNMTO, and N. Ortwein, NRaD Code 80, for advice, encouragement, and helpful discussions; and E. Doherty, D. Jensen, and S. Richardson of the Mayo Foundation for preparation of text and figures.

PY - 1995/10

Y1 - 1995/10

N2 - We present a method for calculating the dielectric constant and the dissipation factor for thin-film ferroelectric capacitors from scattering parameter measurements at multi-gigahertz frequencies. Physical measurement is discussed along with description of the model upon which the calculation is based. Experimental results for 0.5 micron films of PZT are reported up to 15 GHz. Direct measurement is compared with indirectly calculated values at the 100 MHz to 1.5 GHz range, showing excellent agreement.

AB - We present a method for calculating the dielectric constant and the dissipation factor for thin-film ferroelectric capacitors from scattering parameter measurements at multi-gigahertz frequencies. Physical measurement is discussed along with description of the model upon which the calculation is based. Experimental results for 0.5 micron films of PZT are reported up to 15 GHz. Direct measurement is compared with indirectly calculated values at the 100 MHz to 1.5 GHz range, showing excellent agreement.

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DO - 10.1080/10584589508012291

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ER -

High frequency dielectric properties of thin-film pzt capacitors

Abstract

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