Heavy-Ion Broad-Beam and Microprobe Studies of Single-Event Upsets in 0.20-μm SiGe Heterojunction Bipolar Transistors and Circuits

Robert A. Reed; Paul W. Marshall; James C. Pickel; Martin A. Carts; Bryan Fodness; Guofu Niu; Karl Fritz; Gyorgy Vizkelethy; Paul E. Dodd; Tim Irwin; John D. Cressler; Ramkumar Krithivasan; Pamela Riggs; Jason Prairie; Barbara Randall; Barry Gilbert; Kenneth A. LaBel

doi:10.1109/TNS.2003.821815

Heavy-Ion Broad-Beam and Microprobe Studies of Single-Event Upsets in 0.20-μm SiGe Heterojunction Bipolar Transistors and Circuits

Robert A. Reed, Paul W. Marshall, James C. Pickel, Martin A. Carts, Bryan Fodness, Guofu Niu, Karl Fritz, Gyorgy Vizkelethy, Paul E. Dodd, Tim Irwin, John D. Cressler, Ramkumar Krithivasan, Pamela Riggs, Jason Prairie, Barbara Randall, Barry Gilbert, Kenneth A. LaBel

Physiology & Biomedical Engineering

Research output: Contribution to journal › Article

56 Scopus citations

Abstract

Combining broad-beam circuit level single-event upset (SEU) response with heavy ion microprobe charge collection measurements on single silicon-germanium heterojunction bipolar transistors improves understanding of the charge collection mechanisms responsible for SEU response of digital SiGe HBT technology. This new understanding of the SEU mechanisms shows that the right rectangular parallele-piped model for the sensitive volume is not applicable to this technology. A new first-order physical model is proposed and calibrated with moderate success.

Original language	English (US)
Pages (from-to)	2184-2190
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	50
Issue number	6 I
DOIs	https://doi.org/10.1109/TNS.2003.821815
State	Published - Dec 1 2003

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Keywords

Ground testing
Modeling
SiGe
Silicon germanium
Single event effect
Single event upset

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Cite this

Reed, R. A., Marshall, P. W., Pickel, J. C., Carts, M. A., Fodness, B., Niu, G., Fritz, K., Vizkelethy, G., Dodd, P. E., Irwin, T., Cressler, J. D., Krithivasan, R., Riggs, P., Prairie, J., Randall, B., Gilbert, B., & LaBel, K. A. (2003). Heavy-Ion Broad-Beam and Microprobe Studies of Single-Event Upsets in 0.20-μm SiGe Heterojunction Bipolar Transistors and Circuits. IEEE Transactions on Nuclear Science, 50(6 I), 2184-2190. https://doi.org/10.1109/TNS.2003.821815

Heavy-Ion Broad-Beam and Microprobe Studies of Single-Event Upsets in 0.20-μm SiGe Heterojunction Bipolar Transistors and Circuits. / Reed, Robert A.; Marshall, Paul W.; Pickel, James C.; Carts, Martin A.; Fodness, Bryan; Niu, Guofu; Fritz, Karl; Vizkelethy, Gyorgy; Dodd, Paul E.; Irwin, Tim; Cressler, John D.; Krithivasan, Ramkumar; Riggs, Pamela; Prairie, Jason; Randall, Barbara; Gilbert, Barry; LaBel, Kenneth A.

In: IEEE Transactions on Nuclear Science, Vol. 50, No. 6 I, 01.12.2003, p. 2184-2190.

Research output: Contribution to journal › Article

Reed, RA, Marshall, PW, Pickel, JC, Carts, MA, Fodness, B, Niu, G, Fritz, K, Vizkelethy, G, Dodd, PE, Irwin, T, Cressler, JD, Krithivasan, R, Riggs, P, Prairie, J, Randall, B, Gilbert, B & LaBel, KA 2003, 'Heavy-Ion Broad-Beam and Microprobe Studies of Single-Event Upsets in 0.20-μm SiGe Heterojunction Bipolar Transistors and Circuits', IEEE Transactions on Nuclear Science, vol. 50, no. 6 I, pp. 2184-2190. https://doi.org/10.1109/TNS.2003.821815

Reed, Robert A. ; Marshall, Paul W. ; Pickel, James C. ; Carts, Martin A. ; Fodness, Bryan ; Niu, Guofu ; Fritz, Karl ; Vizkelethy, Gyorgy ; Dodd, Paul E. ; Irwin, Tim ; Cressler, John D. ; Krithivasan, Ramkumar ; Riggs, Pamela ; Prairie, Jason ; Randall, Barbara ; Gilbert, Barry ; LaBel, Kenneth A. / Heavy-Ion Broad-Beam and Microprobe Studies of Single-Event Upsets in 0.20-μm SiGe Heterojunction Bipolar Transistors and Circuits. In: IEEE Transactions on Nuclear Science. 2003 ; Vol. 50, No. 6 I. pp. 2184-2190.

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abstract = "Combining broad-beam circuit level single-event upset (SEU) response with heavy ion microprobe charge collection measurements on single silicon-germanium heterojunction bipolar transistors improves understanding of the charge collection mechanisms responsible for SEU response of digital SiGe HBT technology. This new understanding of the SEU mechanisms shows that the right rectangular parallele-piped model for the sensitive volume is not applicable to this technology. A new first-order physical model is proposed and calibrated with moderate success.",

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AU - Fodness, Bryan

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Access to Document

10.1109/TNS.2003.821815