@article{67aa7a5373614a1dad1861653565370c,
title = "Heavy-Ion Broad-Beam and Microprobe Studies of Single-Event Upsets in 0.20-μm SiGe Heterojunction Bipolar Transistors and Circuits",
abstract = "Combining broad-beam circuit level single-event upset (SEU) response with heavy ion microprobe charge collection measurements on single silicon-germanium heterojunction bipolar transistors improves understanding of the charge collection mechanisms responsible for SEU response of digital SiGe HBT technology. This new understanding of the SEU mechanisms shows that the right rectangular parallele-piped model for the sensitive volume is not applicable to this technology. A new first-order physical model is proposed and calibrated with moderate success.",
keywords = "Ground testing, Modeling, SiGe, Silicon germanium, Single event effect, Single event upset",
author = "Reed, {Robert A.} and Marshall, {Paul W.} and Pickel, {James C.} and Carts, {Martin A.} and Bryan Fodness and Guofu Niu and Karl Fritz and Gyorgy Vizkelethy and Dodd, {Paul E.} and Tim Irwin and Cressler, {John D.} and Ramkumar Krithivasan and Pamela Riggs and Jason Prairie and Barbara Randall and Barry Gilbert and LaBel, {Kenneth A.}",
note = "Funding Information: Manuscript received July 21, 2003; revised September 10, 2003. This work was supported by NASA Electronic Parts and Packaging (NEPP) Program{\textquoteright}s Electronics Radiation Characterization (ERC) Project, Defense Threat Reduction Agency (DTRA) under IACRO 02-4039I. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the U.S. Department of Energy under Contract DE-AC04-94AL85000.",
year = "2003",
month = dec,
doi = "10.1109/TNS.2003.821815",
language = "English (US)",
volume = "50",
pages = "2184--2190",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6 I",
}