Heavy-Ion Broad-Beam and Microprobe Studies of Single-Event Upsets in 0.20-μm SiGe Heterojunction Bipolar Transistors and Circuits

Robert A. Reed, Paul W. Marshall, James C. Pickel, Martin A. Carts, Bryan Fodness, Guofu Niu, Karl Fritz, Gyorgy Vizkelethy, Paul E. Dodd, Tim Irwin, John D. Cressler, Ramkumar Krithivasan, Pamela Riggs, Jason Prairie, Barbara Randall, Barry Gilbert, Kenneth A. LaBel

Research output: Contribution to journalArticle

56 Scopus citations

Abstract

Combining broad-beam circuit level single-event upset (SEU) response with heavy ion microprobe charge collection measurements on single silicon-germanium heterojunction bipolar transistors improves understanding of the charge collection mechanisms responsible for SEU response of digital SiGe HBT technology. This new understanding of the SEU mechanisms shows that the right rectangular parallele-piped model for the sensitive volume is not applicable to this technology. A new first-order physical model is proposed and calibrated with moderate success.

Original languageEnglish (US)
Pages (from-to)2184-2190
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume50
Issue number6 I
DOIs
StatePublished - Dec 1 2003

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Keywords

  • Ground testing
  • Modeling
  • SiGe
  • Silicon germanium
  • Single event effect
  • Single event upset

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Reed, R. A., Marshall, P. W., Pickel, J. C., Carts, M. A., Fodness, B., Niu, G., Fritz, K., Vizkelethy, G., Dodd, P. E., Irwin, T., Cressler, J. D., Krithivasan, R., Riggs, P., Prairie, J., Randall, B., Gilbert, B., & LaBel, K. A. (2003). Heavy-Ion Broad-Beam and Microprobe Studies of Single-Event Upsets in 0.20-μm SiGe Heterojunction Bipolar Transistors and Circuits. IEEE Transactions on Nuclear Science, 50(6 I), 2184-2190. https://doi.org/10.1109/TNS.2003.821815