Growth of two-dimensional GaN in Na-4 mica nanochannels

Santanu Bhattacharya; Anindya Datta; Sandip Dhara; Dipankar Chakravorty

doi:10.1088/0022-3727/42/23/235504

Growth of two-dimensional GaN in Na-4 mica nanochannels

Santanu Bhattacharya, Anindya Datta, Sandip Dhara, Dipankar Chakravorty

Cancer Biology

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Two-dimensional GaN films and ribbons have been synthesized within Na-4 mica nanochannels. The thickness of the films is 0.6 nm as estimated from published x-ray diffraction data of Na-4 mica. Room temperature photoluminescence studies show a blue shift in bandgap which is ascribed to the quantum confinement effect. Unusually long excitonic lifetimes in these 2D systems appear to indicate low density of defects.

Original language	English (US)
Article number	235504
Journal	Journal of Physics D: Applied Physics
Volume	42
Issue number	23
DOIs	https://doi.org/10.1088/0022-3727/42/23/235504
State	Published - 2009

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/42/23/235504

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abstract = "Two-dimensional GaN films and ribbons have been synthesized within Na-4 mica nanochannels. The thickness of the films is 0.6 nm as estimated from published x-ray diffraction data of Na-4 mica. Room temperature photoluminescence studies show a blue shift in bandgap which is ascribed to the quantum confinement effect. Unusually long excitonic lifetimes in these 2D systems appear to indicate low density of defects.",

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AB - Two-dimensional GaN films and ribbons have been synthesized within Na-4 mica nanochannels. The thickness of the films is 0.6 nm as estimated from published x-ray diffraction data of Na-4 mica. Room temperature photoluminescence studies show a blue shift in bandgap which is ascribed to the quantum confinement effect. Unusually long excitonic lifetimes in these 2D systems appear to indicate low density of defects.

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Growth of two-dimensional GaN in Na-4 mica nanochannels

Abstract

ASJC Scopus subject areas

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