Digital gallium arsenide integrated circuits are presently being designed as either low-lead-count devices which operate at gigahertz rates, or high-lead-count devices which operate at 25-200-MHz rates. Packaging requirements for the two types are somewhat different. The development of several styles of chip carriers designed for the two types of devices has been undertaken. Design criteria and test results are presented.
|Original language||English (US)|
|Number of pages||4|
|State||Published - Dec 1 1986|
ASJC Scopus subject areas
- Electrical and Electronic Engineering