DEVELOPMENT OF HIGH LEAD DENSITY MINI CHIP CARRIERS FOR GALLIUM ARSENIDE DIGITAL INTEGRATED CIRCUITS.

Daniel J. Schwab; Barry K. Gilbert

DEVELOPMENT OF HIGH LEAD DENSITY MINI CHIP CARRIERS FOR GALLIUM ARSENIDE DIGITAL INTEGRATED CIRCUITS.

Daniel J. Schwab, Barry K. Gilbert

Physiology & Biomedical Engineering

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

Digital gallium arsenide integrated circuits are presently being designed as either low-lead-count devices which operate at gigahertz rates, or high-lead-count devices which operate at 25-200-MHz rates. Packaging requirements for the two types are somewhat different. The development of several styles of chip carriers designed for the two types of devices has been undertaken. Design criteria and test results are presented.

Original language	English (US)
Pages	177-180
Number of pages	4
State	Published - Dec 1 1986

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@conference{08c44be6a34a40f89e6aabe5e04e9ec1,

title = "DEVELOPMENT OF HIGH LEAD DENSITY MINI CHIP CARRIERS FOR GALLIUM ARSENIDE DIGITAL INTEGRATED CIRCUITS.",

abstract = "Digital gallium arsenide integrated circuits are presently being designed as either low-lead-count devices which operate at gigahertz rates, or high-lead-count devices which operate at 25-200-MHz rates. Packaging requirements for the two types are somewhat different. The development of several styles of chip carriers designed for the two types of devices has been undertaken. Design criteria and test results are presented.",

author = "Schwab, {Daniel J.} and Gilbert, {Barry K.}",

year = "1986",

month = dec,

day = "1",

language = "English (US)",

pages = "177--180",

}

TY - CONF

T1 - DEVELOPMENT OF HIGH LEAD DENSITY MINI CHIP CARRIERS FOR GALLIUM ARSENIDE DIGITAL INTEGRATED CIRCUITS.

AU - Schwab, Daniel J.

AU - Gilbert, Barry K.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Digital gallium arsenide integrated circuits are presently being designed as either low-lead-count devices which operate at gigahertz rates, or high-lead-count devices which operate at 25-200-MHz rates. Packaging requirements for the two types are somewhat different. The development of several styles of chip carriers designed for the two types of devices has been undertaken. Design criteria and test results are presented.

AB - Digital gallium arsenide integrated circuits are presently being designed as either low-lead-count devices which operate at gigahertz rates, or high-lead-count devices which operate at 25-200-MHz rates. Packaging requirements for the two types are somewhat different. The development of several styles of chip carriers designed for the two types of devices has been undertaken. Design criteria and test results are presented.

UR - http://www.scopus.com/inward/record.url?scp=0022914833&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022914833&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0022914833

SP - 177

EP - 180

ER -

DEVELOPMENT OF HIGH LEAD DENSITY MINI CHIP CARRIERS FOR GALLIUM ARSENIDE DIGITAL INTEGRATED CIRCUITS.

Abstract

ASJC Scopus subject areas

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