DEVELOPMENT OF HIGH LEAD DENSITY MINI CHIP CARRIERS FOR GALLIUM ARSENIDE DIGITAL INTEGRATED CIRCUITS.

Daniel J. Schwab, Barry Kent Gilbert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Digital gallium arsenide integrated circuits are presently being designed as either low-lead-count devices which operate at gigahertz rates, or high-lead-count devices which operate at 25-200-MHz rates. Packaging requirements for the two types are somewhat different. The development of several styles of chip carriers designed for the two types of devices has been undertaken. Design criteria and test results are presented.

Original languageEnglish (US)
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Place of PublicationNew York, NY, USA
PublisherIEEE
Pages177-180
Number of pages4
StatePublished - 1986

Fingerprint

Digital integrated circuits
Gallium arsenide
Lead
Integrated circuits
Packaging

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Schwab, D. J., & Gilbert, B. K. (1986). DEVELOPMENT OF HIGH LEAD DENSITY MINI CHIP CARRIERS FOR GALLIUM ARSENIDE DIGITAL INTEGRATED CIRCUITS. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 177-180). New York, NY, USA: IEEE.

DEVELOPMENT OF HIGH LEAD DENSITY MINI CHIP CARRIERS FOR GALLIUM ARSENIDE DIGITAL INTEGRATED CIRCUITS. / Schwab, Daniel J.; Gilbert, Barry Kent.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). New York, NY, USA : IEEE, 1986. p. 177-180.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Schwab, DJ & Gilbert, BK 1986, DEVELOPMENT OF HIGH LEAD DENSITY MINI CHIP CARRIERS FOR GALLIUM ARSENIDE DIGITAL INTEGRATED CIRCUITS. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, New York, NY, USA, pp. 177-180.
Schwab DJ, Gilbert BK. DEVELOPMENT OF HIGH LEAD DENSITY MINI CHIP CARRIERS FOR GALLIUM ARSENIDE DIGITAL INTEGRATED CIRCUITS. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). New York, NY, USA: IEEE. 1986. p. 177-180
Schwab, Daniel J. ; Gilbert, Barry Kent. / DEVELOPMENT OF HIGH LEAD DENSITY MINI CHIP CARRIERS FOR GALLIUM ARSENIDE DIGITAL INTEGRATED CIRCUITS. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). New York, NY, USA : IEEE, 1986. pp. 177-180
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abstract = "Digital gallium arsenide integrated circuits are presently being designed as either low-lead-count devices which operate at gigahertz rates, or high-lead-count devices which operate at 25-200-MHz rates. Packaging requirements for the two types are somewhat different. The development of several styles of chip carriers designed for the two types of devices has been undertaken. Design criteria and test results are presented.",
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