DEVELOPMENT OF HIGH LEAD DENSITY MINI CHIP CARRIERS FOR GALLIUM ARSENIDE DIGITAL INTEGRATED CIRCUITS.

Daniel J. Schwab, Barry K. Gilbert

Research output: Contribution to conferencePaper

3 Scopus citations

Abstract

Digital gallium arsenide integrated circuits are presently being designed as either low-lead-count devices which operate at gigahertz rates, or high-lead-count devices which operate at 25-200-MHz rates. Packaging requirements for the two types are somewhat different. The development of several styles of chip carriers designed for the two types of devices has been undertaken. Design criteria and test results are presented.

Original languageEnglish (US)
Pages177-180
Number of pages4
StatePublished - Dec 1 1986

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'DEVELOPMENT OF HIGH LEAD DENSITY MINI CHIP CARRIERS FOR GALLIUM ARSENIDE DIGITAL INTEGRATED CIRCUITS.'. Together they form a unique fingerprint.

  • Cite this