TY - JOUR
T1 - Development of Conductive Boron-Doped Diamond Electrode
T2 - A microscopic, Spectroscopic, and Voltammetric Study
AU - Bennet, Kevin E.
AU - Lee, Kendall H.
AU - Kruchowski, James N.
AU - Chang, Su Youne
AU - Marsh, Michael P.
AU - Van Orsow, Alexander A.
AU - Paez, Aurelio
AU - Manciu, Felicia S.
PY - 2013
Y1 - 2013
N2 - Building on diamond characteristics such as hardness, chemical inertness and low electron emission threshold voltage, the current microscopic, spectroscopic and voltammetric investigations are directed towards improving the properties of electrode coating materials for their future use in clinical studies of deep brain stimulation via fast-scan cyclic voltammetry (FSCV). In this study we combine the capabilities of confocal Raman mapping in providing detailed and accurate analysis of local distributions of material constituents in a series of boron-doped polycrystalline diamond films grown by chemical vapor deposition, with information from the more conventional techniques of scanning electron microscopy (SEM) and infrared absorption spectroscopy. Although SEM images show a uniform distribution of film crystallites, they have the limitation of being unable to differentiate the distribution of boron in the diamond. Values of 1018-1021 atoms/cm3 of boron content have been estimated from the absorption coefficient of the 1290 cm-1 infrared absorption band and from the 500 cm-1 Raman vibration. The observed accumulation of boron atoms and carbon sp2 impurities at the grain boundaries suggests that very high doping levels do not necessarily contribute to improvement of the material's conductivity, corroborating with voltammetric data. FSCV results also indicate an enhanced stability of analyte detection.
AB - Building on diamond characteristics such as hardness, chemical inertness and low electron emission threshold voltage, the current microscopic, spectroscopic and voltammetric investigations are directed towards improving the properties of electrode coating materials for their future use in clinical studies of deep brain stimulation via fast-scan cyclic voltammetry (FSCV). In this study we combine the capabilities of confocal Raman mapping in providing detailed and accurate analysis of local distributions of material constituents in a series of boron-doped polycrystalline diamond films grown by chemical vapor deposition, with information from the more conventional techniques of scanning electron microscopy (SEM) and infrared absorption spectroscopy. Although SEM images show a uniform distribution of film crystallites, they have the limitation of being unable to differentiate the distribution of boron in the diamond. Values of 1018-1021 atoms/cm3 of boron content have been estimated from the absorption coefficient of the 1290 cm-1 infrared absorption band and from the 500 cm-1 Raman vibration. The observed accumulation of boron atoms and carbon sp2 impurities at the grain boundaries suggests that very high doping levels do not necessarily contribute to improvement of the material's conductivity, corroborating with voltammetric data. FSCV results also indicate an enhanced stability of analyte detection.
KW - Boron-doped diamond
KW - Confocal Raman microscopy
KW - Fast-scan cyclic voltammetry
KW - Infrared absorption spectroscopy
KW - Scanning electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=84890285593&partnerID=8YFLogxK
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U2 - 10.3390/ma6125726
DO - 10.3390/ma6125726
M3 - Article
AN - SCOPUS:84890285593
SN - 1996-1944
VL - 6
SP - 5726
EP - 5741
JO - Materials
JF - Materials
IS - 12
ER -