Determination of complex permittivity of low-loss dielectrics

Robert H. Voelker; Guang Tsai Lei; Guang Wen Pan; Barry K. Gilbert

doi:10.1109/22.641802

Determination of complex permittivity of low-loss dielectrics

Robert H. Voelker, Guang Tsai Lei, Guang Wen Pan, Barry K. Gilbert

Physiology & Biomedical Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A new high-order-mode analytical method is described for calculating the frequency-dependent complex permittivity of a low-loss dielectric in a parallel-plate structure using a planar microwave circuit model. An analytical expression for the complex permittivity is derived in terms of the terminal impedance at a modal resonant frequency of the structure. The derivation provides physical and mathematical insight into the relation between complex permittivity and port impedance. The technique is validated by good agreement between manufacturer's specifications and complex permittivity calculated from measurements near resonant frequencies for a printed circuit board (PCB).

Original language	English (US)
Pages (from-to)	1955-1960
Number of pages	6
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	45
Issue number	10 PART 2
DOIs	https://doi.org/10.1109/22.641802
State	Published - 1997

Keywords

Dielectric losses
Dielectric measurements
Highspeed circuits/devices
Microwave circuits
Microwave measurements
Microwave resonators
Multichip modules
Printed circuits

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/22.641802

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title = "Determination of complex permittivity of low-loss dielectrics",

abstract = "A new high-order-mode analytical method is described for calculating the frequency-dependent complex permittivity of a low-loss dielectric in a parallel-plate structure using a planar microwave circuit model. An analytical expression for the complex permittivity is derived in terms of the terminal impedance at a modal resonant frequency of the structure. The derivation provides physical and mathematical insight into the relation between complex permittivity and port impedance. The technique is validated by good agreement between manufacturer's specifications and complex permittivity calculated from measurements near resonant frequencies for a printed circuit board (PCB).",

keywords = "Dielectric losses, Dielectric measurements, Highspeed circuits/devices, Microwave circuits, Microwave measurements, Microwave resonators, Multichip modules, Printed circuits",

author = "Voelker, {Robert H.} and Lei, {Guang Tsai} and Pan, {Guang Wen} and Gilbert, {Barry K.}",

note = "Funding Information: Manuscript received January 8, 1997; revised May 23, 1997. This work was supported in part by DARPA/ESTO under Contract N66001-89-C-0104 and Contract N66001-94-C-0051 from NCCOSC/NRaD. R. H. Voelker is with Sun Microelectronics Division, Sun Microsystems, Inc., Palo Alto, CA 94303 USA. G.-T. Lei and B. K. Gilbert are with the Department of Physiology and Biophysics, Mayo Foundation, Rochester, MN 55905 USA. G.-W. Pan is with the Department of Electric Engineering, Arizona State University, Tempe, AZ 85287-7206 USA. Publisher Item Identifier S 0018-9480(97)07386-9.",

year = "1997",

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T1 - Determination of complex permittivity of low-loss dielectrics

AU - Voelker, Robert H.

AU - Lei, Guang Tsai

AU - Pan, Guang Wen

AU - Gilbert, Barry K.

N1 - Funding Information: Manuscript received January 8, 1997; revised May 23, 1997. This work was supported in part by DARPA/ESTO under Contract N66001-89-C-0104 and Contract N66001-94-C-0051 from NCCOSC/NRaD. R. H. Voelker is with Sun Microelectronics Division, Sun Microsystems, Inc., Palo Alto, CA 94303 USA. G.-T. Lei and B. K. Gilbert are with the Department of Physiology and Biophysics, Mayo Foundation, Rochester, MN 55905 USA. G.-W. Pan is with the Department of Electric Engineering, Arizona State University, Tempe, AZ 85287-7206 USA. Publisher Item Identifier S 0018-9480(97)07386-9.

PY - 1997

Y1 - 1997

N2 - A new high-order-mode analytical method is described for calculating the frequency-dependent complex permittivity of a low-loss dielectric in a parallel-plate structure using a planar microwave circuit model. An analytical expression for the complex permittivity is derived in terms of the terminal impedance at a modal resonant frequency of the structure. The derivation provides physical and mathematical insight into the relation between complex permittivity and port impedance. The technique is validated by good agreement between manufacturer's specifications and complex permittivity calculated from measurements near resonant frequencies for a printed circuit board (PCB).

AB - A new high-order-mode analytical method is described for calculating the frequency-dependent complex permittivity of a low-loss dielectric in a parallel-plate structure using a planar microwave circuit model. An analytical expression for the complex permittivity is derived in terms of the terminal impedance at a modal resonant frequency of the structure. The derivation provides physical and mathematical insight into the relation between complex permittivity and port impedance. The technique is validated by good agreement between manufacturer's specifications and complex permittivity calculated from measurements near resonant frequencies for a printed circuit board (PCB).

KW - Dielectric losses

KW - Dielectric measurements

KW - Highspeed circuits/devices

KW - Microwave circuits

KW - Microwave measurements

KW - Microwave resonators

KW - Multichip modules

KW - Printed circuits

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JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

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ER -

Determination of complex permittivity of low-loss dielectrics

Abstract

Keywords

ASJC Scopus subject areas

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