DESIGN AND FABRICATION OF A DIGITAL RF MEMORY USING CUSTOM DESIGNED GAAS INTEGRATED CIRCUITS.

Barry K. Gilbert, Daniel J. Schwab, Lester M. Pastuszyn, Allen Firstenberg, Robert H. Evans

Research output: Contribution to conferencePaper

8 Scopus citations

Abstract

The design constraints encountered during the implementation of a mixed gallium arsenide/silicon ECL digital RF memory (DRFM) are described. This unit, which is configured to digitize an analog signal at 1 GHz rates, has served as a test bed for ten separate designs for the high clock rate front and back ends of the DRFM system. Preliminary test results from the GaAs components are presented and discussed.

Original languageEnglish (US)
Pages173-176
Number of pages4
StatePublished - Dec 1 1985

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'DESIGN AND FABRICATION OF A DIGITAL RF MEMORY USING CUSTOM DESIGNED GAAS INTEGRATED CIRCUITS.'. Together they form a unique fingerprint.

  • Cite this

    Gilbert, B. K., Schwab, D. J., Pastuszyn, L. M., Firstenberg, A., & Evans, R. H. (1985). DESIGN AND FABRICATION OF A DIGITAL RF MEMORY USING CUSTOM DESIGNED GAAS INTEGRATED CIRCUITS.. 173-176.