Deep Brain Stimulation of Anterior Nuclei of the Thalamus and Hippocampal Seizure Rate Modulate Verbal Memory Performance

Victoria S. Marks, Tom J. Richner, Nicholas M. Gregg, Vladimir Sladky, Jaromir Dolezal, Vaclav Kremen, Gregory A. Worrell, Michal T. Kucewicz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Verbal memory impairment is a common symptom of temporal lobe epilepsy (TLE). The ability to encode and recall verbal memories can be probed with the classic free recall task. We hypothesized that increased seizure frequency will lead to decreased verbal memory. We investigated this hypothesis in patients receiving chronic stimulation to bilateral anterior nuclei of the thalamus (ANT) deep brain stimulation (DBS). Recordings were obtained from individuals with drug resistant mesial TLE implanted with an investigational Medtronic Summit RC+S sensing and stimulation device. As patient seizure diaries are notoriously inaccurate, the patient's intracranial electroencephalography (iEEG) was scored for seizures using a validated seizure classifier with trained epileptologist review, resulting in a reliable seizure diary. The subjects completed free recall memory tasks in their home environment with iEEG and behavioral data streamed to a handheld device and cloud repository. Using multivariate analysis of variance, we were able to determine that ANT stimulation modulates memory performance. Further, changes in the seizure rate were predictive of changes in memory performance as captured by a generalized linear model (GLM). Emerging devices for electrical stimulation of the brain enabling continuous streaming of the iEEG data are crucial for long-term studies of underlying brain dynamics during cognitive tasks. However, not all patients are candidates for devices with chronic sensing capabilities, and this study suggests that changes in verbal memory performance may provide a suitable metric of therapy effectiveness in lieu of a reliable, objective seizure diary.

Original languageEnglish (US)
Title of host publication2022 IEEE International Conference on Electro Information Technology, eIT 2022
PublisherIEEE Computer Society
Pages114-117
Number of pages4
ISBN (Electronic)9781665480093
DOIs
StatePublished - 2022
Event2022 IEEE International Conference on Electro Information Technology, eIT 2022 - Mankato, United States
Duration: May 19 2022May 21 2022

Publication series

NameIEEE International Conference on Electro Information Technology
Volume2022-May
ISSN (Print)2154-0357
ISSN (Electronic)2154-0373

Conference

Conference2022 IEEE International Conference on Electro Information Technology, eIT 2022
Country/TerritoryUnited States
CityMankato
Period5/19/225/21/22

Keywords

  • DBS
  • generalized linear model
  • memory
  • stimulation
  • thalamus

ASJC Scopus subject areas

  • Computer Science Applications
  • Information Systems
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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