Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

Erik S. Daniel, Xavier Cartoixà, William R. Frensley, David Z.Y. Ting, T. C. McGill

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

We present a method of coupling drift-diffusion simulations with quantum transmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel currents can flow. Simulated results are presented for a thin oxide Al/SiO2/Si structure and an Al/SiO2/n-Si/p-Si tunnel switching diode. We demonstrate the careful use of the recombination lifetime as an adjustable or relaxable parameter in order to obtain converging solutions.

Original languageEnglish (US)
Pages (from-to)1052-1060
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume47
Issue number5
DOIs
StatePublished - Dec 1 2000

Keywords

  • Drift-diffusion
  • QTBM
  • SRAM
  • SiO
  • Silicon
  • Simulation
  • TSD
  • Tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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