Autonomous bit error rate testing at multi-Gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)

Paul Marshall, Marty Carts, Steve Currie, Robert Reed, Barb Randall, Karl Fritz, Krystal Kennedy, Melanie Berg, Ramkumar Krithivasan, Christina Siedleck, Ray Ladbury, Cheryl Marshall, John Cressler, Guofu Niu, Ken Label, Barry Kent Gilbert

Research output: Contribution to journalArticle

69 Scopus citations

Abstract

SEE testing at multi-Gbit/s data rates has traditionally involved elaborate high speed test equipment setups for at-speed testing. We demonstrate a generally applicable self test circuit approach implemented in IBM's 5AM SiGe process, and describe its ability to capture complex error signatures during circuit operation at data rates exceeding 5 Gbit/s. Comparisons of data acquired with FPGA control of the CREST ASIC versus conventional bit error rate test equipment validate the approach. In addition, we describe SEE characteristics of the IBM 5AM process implemented in five variations of the D flip-flop based serial register. Heavy ion SEE data acquired at angles follow the traditional RPP-based analysis approach in one case, but deviate by orders on magnitude in others, even though all circuits are implemented in the same 5AM SiGe HBT process.

Original languageEnglish (US)
Pages (from-to)2446-2454
Number of pages9
JournalIEEE Transactions on Nuclear Science
Volume52
Issue number6
DOIs
StatePublished - Dec 2005

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Keywords

  • Built in self test
  • High speed bit error rate testing SiGe
  • Single event effects (SEEs)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Marshall, P., Carts, M., Currie, S., Reed, R., Randall, B., Fritz, K., Kennedy, K., Berg, M., Krithivasan, R., Siedleck, C., Ladbury, R., Marshall, C., Cressler, J., Niu, G., Label, K., & Gilbert, B. K. (2005). Autonomous bit error rate testing at multi-Gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST). IEEE Transactions on Nuclear Science, 52(6), 2446-2454. https://doi.org/10.1109/TNS.2005.860740