@article{03e8dea5d84141a181b579b7bd49250d,
title = "Application of RHBD techniques to SEU hardening of third-generation SiGe HBT logic circuits",
abstract = "Shift registers featuring radiation-hardening-by-design (RHBD) techniques are realized in IBM 8HP SiGe BiCMOS technology. Both circuit and device-level RHBD techniques are employed to improve the overall SEU immunity of the shift registers. Circuit-level RHBD techniques include dual-interleaving and gated-feedback that achieve SEU mitigation through local latch-level redundancy and correction. In addition, register-level RHBD based on triple-module redundancy (TMR) versions of dual-interleaved and gated-feedback cell shift registers is also realized to gauge the performance improvement offered by TMR. At the device-level, RHBD C-B-E SiGe HBTs with single collector and base contacts and significantly smaller deep trench-enclosed area than standard C-B-E-B-C devices with dual collector and base contacts are used to reduce the upset sensitive area. The SEU performance of these shift registers was then tested using heavy ions and standard bit-error testing methods. The results obtained are compared to the unhardened standard shift register designed with CBEBC SiGe HBTs. The RHBD-enhanced shift registers perform significantly better than the unhardened circuit, with the TMR technique proving very effective in achieving significant SEU immunity.",
keywords = "Current mode logic (CML), Heavy ion, Heterojunction bipolar transistor (HBT), Radiation hardening by design (RHBD), Shift register, Silicon-germanium (SiGe), Single-event upset (SEU), Triple-module redundancy (TMR)",
author = "Ramkumar Krithivasan and Marshall, {Paul W.} and Mustayeen Nayeem and Sutton, {Akil K.} and Kuo, {Wei Min} and Haugerud, {Becca M.} and Laleh Najafizadeh and Cressler, {John D.} and Carts, {Martin A.} and Marshall, {Cheryl J.} and Hansen, {David L.} and Jobe, {Kay Carol M.} and McKay, {Anthony L.} and Guofu Niu and Robert Reed and Randall, {Barbara A.} and Burfield, {Charles A.} and Lindberg, {Mary Daun} and Gilbert, {Barry K.} and Daniel, {Erik S.}",
note = "Funding Information: Manuscript received July 14, 2006; revised August 21, 2006. This work was supported by the DARPA RHBD Program, DTRA under the Radiation Hardened Microelectronics Program, NASA-GSFC under the NASA Electronic Parts and Packaging (NEPP) Program, Mayo Foundation, Boeing, NASA ETDP, and the Georgia Electronic Design Center at Georgia Tech. R. Krithivasan, M. Nayeem, A. K. Sutton, W.-M. L. Kuo, B. M. Haugerud, and J. D. Cressler, are with the School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA (e-mail: ramkumar@ece.gatech.edu). P. W. Marshall is with NRL/NASA, Brookneal, VA 24528 USA. M. A. Carts and C. J. Marshall are with the NASA Goddard Spaceflight Center, Greenbelt, MD 20771 USA. D. L. Hansen, K.-C. M. Jobe, and A. L. McKay are with the Boeing Space and Intelligence Systems, Los Angeles, CA 90009 USA. G. Niu is with Auburn University, Auburn, AL 36849 USA. R. A. Reed is with Vanderbilt University, Nashville, TN 37235 USA. B. A. Randall, C. A. Burfield, M. D. Lindberg, B. K. Gilbert, and E. S. Daniel are with the Mayo Foundation, Rochester, MN 55901 USA. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2006.885379",
year = "2006",
month = dec,
doi = "10.1109/TNS.2006.885379",
language = "English (US)",
volume = "53",
pages = "3400--3407",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}