TY - GEN
T1 - An overlay interconnect technology for 1 GHz and above MCMs
AU - Gdula, M.
AU - Kornrumpf, W. P.
AU - Gilbert, B. K.
N1 - Publisher Copyright:
© 1992 IEEE.
PY - 1992
Y1 - 1992
N2 - An overlay interconnect technology is presented that is suitable for 1 GHz and above operation of GaAs and Si multichip module (MCM) circuits. This technology encompasses a back side bonded, chips first approach with an adaptive laser photolithography defined multilayer overlay interconnect providing consistent line impedances with low crosstalk and signal delay. Signal propagation velocities of 18 cm/ns have been demonstrated on lines with an insertion loss of 0.25 dB/cm at 10 GHz. This interconnect system has been used to interconnect GaAs digital circuits operating at clock frequencies of 2.0 GHz without power supply bypass capacitors.
AB - An overlay interconnect technology is presented that is suitable for 1 GHz and above operation of GaAs and Si multichip module (MCM) circuits. This technology encompasses a back side bonded, chips first approach with an adaptive laser photolithography defined multilayer overlay interconnect providing consistent line impedances with low crosstalk and signal delay. Signal propagation velocities of 18 cm/ns have been demonstrated on lines with an insertion loss of 0.25 dB/cm at 10 GHz. This interconnect system has been used to interconnect GaAs digital circuits operating at clock frequencies of 2.0 GHz without power supply bypass capacitors.
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U2 - 10.1109/MCMC.1992.201477
DO - 10.1109/MCMC.1992.201477
M3 - Conference contribution
AN - SCOPUS:33748864684
T3 - Proceedings 1992 IEEE Multi-Chip Module Conference MCMC-92
SP - 171
EP - 174
BT - Proceedings 1992 IEEE Multi-Chip Module Conference MCMC-92
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1992 IEEE Multi-Chip Module Conference, MCMC 1992
Y2 - 18 March 1992 through 20 March 1992
ER -