A low power AlSb/InAs HEMT X-band low noise amplifier

B. R. Buhrow, V. Sokolov, P. J. Riemer, N. E. Harff, R. Tsai, A. Gutierrez-Aitken, B. K. Gilbert, E. S. Daniel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We present design and characterization of a low power single stage X-band low noise amplifier in an AlSb/InAs HEMT integrated circuit technology. Gain, noise, linearity, and phase noise characterization are presented.

Original languageEnglish (US)
Title of host publication2005 International Conference on Indium Phosphide and Related Materials
Pages617-620
Number of pages4
DOIs
StatePublished - Dec 1 2005
Event2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom
Duration: May 8 2005May 12 2005

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
Volume2005
ISSN (Print)1092-8669

Other

Other2005 International Conference on Indium Phosphide and Related Materials
CountryUnited Kingdom
CityGlasgow, Scotland
Period5/8/055/12/05

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A low power AlSb/InAs HEMT X-band low noise amplifier'. Together they form a unique fingerprint.

  • Cite this

    Buhrow, B. R., Sokolov, V., Riemer, P. J., Harff, N. E., Tsai, R., Gutierrez-Aitken, A., Gilbert, B. K., & Daniel, E. S. (2005). A low power AlSb/InAs HEMT X-band low noise amplifier. In 2005 International Conference on Indium Phosphide and Related Materials (pp. 617-620). [1517572] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; Vol. 2005). https://doi.org/10.1109/ICIPRM.2005.1517572