A low power AlSb/InAs HEMT X-band low noise amplifier

B. R. Buhrow, V. Sokolov, P. J. Riemer, N. E. Harff, R. Tsai, A. Gutierrez-Aitken, Barry Kent Gilbert, E. S. Daniel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We present design and characterization of a low power single stage X-band low noise amplifier in an AlSb/InAs HEMT integrated circuit technology. Gain, noise, linearity, and phase noise characterization are presented.

Original languageEnglish (US)
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages617-620
Number of pages4
Volume2005
DOIs
StatePublished - 2005
Event2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom
Duration: May 8 2005May 12 2005

Other

Other2005 International Conference on Indium Phosphide and Related Materials
CountryUnited Kingdom
CityGlasgow, Scotland
Period5/8/055/12/05

Fingerprint

Low noise amplifiers
High electron mobility transistors
high electron mobility transistors
superhigh frequencies
low noise
amplifiers
Phase noise
linearity
integrated circuits
Integrated circuits
indium arsenide

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)

Cite this

Buhrow, B. R., Sokolov, V., Riemer, P. J., Harff, N. E., Tsai, R., Gutierrez-Aitken, A., ... Daniel, E. S. (2005). A low power AlSb/InAs HEMT X-band low noise amplifier. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (Vol. 2005, pp. 617-620). [1517572] https://doi.org/10.1109/ICIPRM.2005.1517572

A low power AlSb/InAs HEMT X-band low noise amplifier. / Buhrow, B. R.; Sokolov, V.; Riemer, P. J.; Harff, N. E.; Tsai, R.; Gutierrez-Aitken, A.; Gilbert, Barry Kent; Daniel, E. S.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. Vol. 2005 2005. p. 617-620 1517572.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Buhrow, BR, Sokolov, V, Riemer, PJ, Harff, NE, Tsai, R, Gutierrez-Aitken, A, Gilbert, BK & Daniel, ES 2005, A low power AlSb/InAs HEMT X-band low noise amplifier. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials. vol. 2005, 1517572, pp. 617-620, 2005 International Conference on Indium Phosphide and Related Materials, Glasgow, Scotland, United Kingdom, 5/8/05. https://doi.org/10.1109/ICIPRM.2005.1517572
Buhrow BR, Sokolov V, Riemer PJ, Harff NE, Tsai R, Gutierrez-Aitken A et al. A low power AlSb/InAs HEMT X-band low noise amplifier. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. Vol. 2005. 2005. p. 617-620. 1517572 https://doi.org/10.1109/ICIPRM.2005.1517572
Buhrow, B. R. ; Sokolov, V. ; Riemer, P. J. ; Harff, N. E. ; Tsai, R. ; Gutierrez-Aitken, A. ; Gilbert, Barry Kent ; Daniel, E. S. / A low power AlSb/InAs HEMT X-band low noise amplifier. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. Vol. 2005 2005. pp. 617-620
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