A low power AlSb/InAs HEMT X-band low noise amplifier

B. R. Buhrow, V. Sokolov, P. J. Riemer, N. E. Harff, R. Tsai, A. Gutierrez-Aitken, B. K. Gilbert, E. S. Daniel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We present design and characterization of a low power single stage X-band low noise amplifier in an AlSb/InAs HEMT integrated circuit technology. Gain, noise, linearity, and phase noise characterization are presented.

Original languageEnglish (US)
Title of host publication2005 International Conference on Indium Phosphide and Related Materials
Pages617-620
Number of pages4
DOIs
StatePublished - Dec 1 2005
Event2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom
Duration: May 8 2005May 12 2005

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
Volume2005
ISSN (Print)1092-8669

Other

Other2005 International Conference on Indium Phosphide and Related Materials
Country/TerritoryUnited Kingdom
CityGlasgow, Scotland
Period5/8/055/12/05

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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