A low power AlSb/InAs HEMT X-band low noise amplifier

B. R. Buhrow; V. Sokolov; P. J. Riemer; N. E. Harff; R. Tsai; A. Gutierrez-Aitken; B. K. Gilbert; E. S. Daniel

doi:10.1109/ICIPRM.2005.1517572

A low power AlSb/InAs HEMT X-band low noise amplifier

B. R. Buhrow, V. Sokolov, P. J. Riemer, N. E. Harff, R. Tsai, A. Gutierrez-Aitken, B. K. Gilbert, E. S. Daniel

Physiology & Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

We present design and characterization of a low power single stage X-band low noise amplifier in an AlSb/InAs HEMT integrated circuit technology. Gain, noise, linearity, and phase noise characterization are presented.

Original language	English (US)
Title of host publication	2005 International Conference on Indium Phosphide and Related Materials
Pages	617-620
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2005.1517572
State	Published - 2005
Event	2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom Duration: May 8 2005 → May 12 2005

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Volume	2005
ISSN (Print)	1092-8669

Other

Other	2005 International Conference on Indium Phosphide and Related Materials
Country/Territory	United Kingdom
City	Glasgow, Scotland
Period	5/8/05 → 5/12/05

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ICIPRM.2005.1517572

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Buhrow, B. R., Sokolov, V., Riemer, P. J., Harff, N. E., Tsai, R., Gutierrez-Aitken, A., Gilbert, B. K., & Daniel, E. S. (2005). A low power AlSb/InAs HEMT X-band low noise amplifier. In 2005 International Conference on Indium Phosphide and Related Materials (pp. 617-620). Article 1517572 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; Vol. 2005). https://doi.org/10.1109/ICIPRM.2005.1517572

A low power AlSb/InAs HEMT X-band low noise amplifier. / Buhrow, B. R.; Sokolov, V.; Riemer, P. J. et al.
2005 International Conference on Indium Phosphide and Related Materials. 2005. p. 617-620 1517572 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Buhrow, BR, Sokolov, V, Riemer, PJ, Harff, NE, Tsai, R, Gutierrez-Aitken, A, Gilbert, BK & Daniel, ES 2005, A low power AlSb/InAs HEMT X-band low noise amplifier. in 2005 International Conference on Indium Phosphide and Related Materials., 1517572, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, vol. 2005, pp. 617-620, 2005 International Conference on Indium Phosphide and Related Materials, Glasgow, Scotland, United Kingdom, 5/8/05. https://doi.org/10.1109/ICIPRM.2005.1517572

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abstract = "We present design and characterization of a low power single stage X-band low noise amplifier in an AlSb/InAs HEMT integrated circuit technology. Gain, noise, linearity, and phase noise characterization are presented.",

author = "Buhrow, {B. R.} and V. Sokolov and Riemer, {P. J.} and Harff, {N. E.} and R. Tsai and A. Gutierrez-Aitken and Gilbert, {B. K.} and Daniel, {E. S.}",

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AU - Buhrow, B. R.

AU - Sokolov, V.

AU - Riemer, P. J.

AU - Harff, N. E.

AU - Tsai, R.

AU - Gutierrez-Aitken, A.

AU - Gilbert, B. K.

AU - Daniel, E. S.

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Y1 - 2005

N2 - We present design and characterization of a low power single stage X-band low noise amplifier in an AlSb/InAs HEMT integrated circuit technology. Gain, noise, linearity, and phase noise characterization are presented.

AB - We present design and characterization of a low power single stage X-band low noise amplifier in an AlSb/InAs HEMT integrated circuit technology. Gain, noise, linearity, and phase noise characterization are presented.

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T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

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BT - 2005 International Conference on Indium Phosphide and Related Materials

T2 - 2005 International Conference on Indium Phosphide and Related Materials

Y2 - 8 May 2005 through 12 May 2005

ER -

A low power AlSb/InAs HEMT X-band low noise amplifier

Abstract

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ASJC Scopus subject areas

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