6K GaAs GATE ARRAY WITH FULLY FUNCTIONAL LSI PERSONALIZATION.

Andrzej Peczalski, G. Lee, William R. Betten, H. Somal, Mark Plagens, James R. Biard, Ian Burrows, Barry Kent Gilbert, Rick L. Thompson, Barbara A. Naused, Susan M. Karwoski, Mark L. Samson, Sharon K. Zahn

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A 12 multiplied by 12 multiplier consisting of 19,000 devices was successfully implemented on a 6000-gate array. A high-yield-oriented circuit design and the gate-array architecture are presented. It is shown that when temperature compensation is applied the GaAs circuit operating range can be extended over 160 degree C range. The backgating and dynamic (switching) noise are also discussed as the key noise-margin limiting factors. A specialized on-chip circuitry which enables on-chip measurement and fault localization in complex GaAs ICs is proposed and implemented. The high yield of the multiplier (10%) seems to be limited only by particle contamination, which indicates that the noise margin is satisfactory for the GaAs nonself-aligned depletion-mode fabrication process.

Original languageEnglish (US)
Pages (from-to)581-590
Number of pages10
JournalIEEE Journal of Solid-State Circuits
Volume23
Issue number2
DOIs
StatePublished - Apr 1988

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Networks (circuits)
Contamination
Fabrication
Temperature
Compensation and Redress

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Peczalski, A., Lee, G., Betten, W. R., Somal, H., Plagens, M., Biard, J. R., ... Zahn, S. K. (1988). 6K GaAs GATE ARRAY WITH FULLY FUNCTIONAL LSI PERSONALIZATION. IEEE Journal of Solid-State Circuits, 23(2), 581-590. https://doi.org/10.1109/4.1025

6K GaAs GATE ARRAY WITH FULLY FUNCTIONAL LSI PERSONALIZATION. / Peczalski, Andrzej; Lee, G.; Betten, William R.; Somal, H.; Plagens, Mark; Biard, James R.; Burrows, Ian; Gilbert, Barry Kent; Thompson, Rick L.; Naused, Barbara A.; Karwoski, Susan M.; Samson, Mark L.; Zahn, Sharon K.

In: IEEE Journal of Solid-State Circuits, Vol. 23, No. 2, 04.1988, p. 581-590.

Research output: Contribution to journalArticle

Peczalski, A, Lee, G, Betten, WR, Somal, H, Plagens, M, Biard, JR, Burrows, I, Gilbert, BK, Thompson, RL, Naused, BA, Karwoski, SM, Samson, ML & Zahn, SK 1988, '6K GaAs GATE ARRAY WITH FULLY FUNCTIONAL LSI PERSONALIZATION.', IEEE Journal of Solid-State Circuits, vol. 23, no. 2, pp. 581-590. https://doi.org/10.1109/4.1025
Peczalski A, Lee G, Betten WR, Somal H, Plagens M, Biard JR et al. 6K GaAs GATE ARRAY WITH FULLY FUNCTIONAL LSI PERSONALIZATION. IEEE Journal of Solid-State Circuits. 1988 Apr;23(2):581-590. https://doi.org/10.1109/4.1025
Peczalski, Andrzej ; Lee, G. ; Betten, William R. ; Somal, H. ; Plagens, Mark ; Biard, James R. ; Burrows, Ian ; Gilbert, Barry Kent ; Thompson, Rick L. ; Naused, Barbara A. ; Karwoski, Susan M. ; Samson, Mark L. ; Zahn, Sharon K. / 6K GaAs GATE ARRAY WITH FULLY FUNCTIONAL LSI PERSONALIZATION. In: IEEE Journal of Solid-State Circuits. 1988 ; Vol. 23, No. 2. pp. 581-590.
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